Author: del Barrio Montañés, A.A.
Paper Title Page
THPOTK044 Ultra-Fast Generator for Impact Ionization Triggering 2872
 
  • A.A. del Barrio Montañés, Y. Dutheil, T. Kramer, V. Senaj
    CERN, Meyrin, Switzerland
  • M. Sack
    KIT, Karlsruhe, Germany
 
  Impact ionization triggering can be successfully applied to standard thyristors, thus boosting their dI/dt capability by up to 1000x. This groundbreaking triggering requires applying significant overvoltage on the anode-cathode of thyristor with a slew rate > 1kV/ns. Compact pulse generators based on commercial off-the-shelf (COTS) components would allow the spread of this technology into numerous applications, including fast kicker generators for particle accelerators. In our approach, the beginning of the triggering chain is a HV SiC MOS with an ultra-fast super-boosting gate driver. The super boosting of a 1.7kV rated SiC MOS allows to reduce the MOS rise time by a factor of > 25 (datasheet tr = §I{20}{ns} vs. measured tr < 800ps, resulting in an output voltage slew rate > 1kV/ns and an amplitude > 1kV. Additional boosting is obtained by a Marx generator with GaAs diodes, reaching an output voltage slew rate > 11kV/ns. The final stage will be a Marx generator with medium size thyristors triggered in impact ionization mode with sufficient voltage and current rating necessary for the triggering of a big thyristor. This paper presents the impact ionization triggering of a small size thyristor.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2022-THPOTK044  
About • Received ※ 16 May 2022 — Revised ※ 13 June 2022 — Accepted ※ 14 June 2022 — Issue date ※ 06 July 2022
Cite • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)