Author: Valizadeh, R.
Paper Title Page
TUPAB399 RF Characterisation of New Coatings for Future Circular Collider Beam Screens 2453
 
  • P. Krkotić, F. Pérez, M. Pont, N.D. Tagdulang
    ALBA-CELLS Synchrotron, Cerdanyola del Vallès, Spain
  • S. Calatroni
    CERN, Meyrin, Switzerland
  • X. Granados, J. Gutierrez, T. Puig, A. Romanov, G.T. Telles
    ICMAB, Bellatera, Spain
  • A.N. Hannah, O.B. Malyshev, R. Valizadeh
    STFC/DL/ASTeC, Daresbury, Warrington, Cheshire, United Kingdom
  • J.M. O’Callaghan Castella
    Universitat Politécnica de Catalunya, Barcelona, Spain
  • D. Whitehead
    The University of Manchester, Laser Processing Research Center, Manchester, United Kingdom
 
  For the future high energy colliders being under the design at this moment, the choice of a low surface impedance beam screen coating material has become of fundamental importance to ensure sufficiently low beam impedance and consequently guaranteed stable operation at high currents. We have studied the use of high-temperature superconducting coated conductors as possible coating materials for the beam screen of the FCC-hh. In addition, amorphous carbon coating and laser-based surface treatment techniques are effective surface treatments to lower the secondary electron yield and minimise the electron cloud build-up. We have developed and adapted different experimental setups based on resonating structures at frequencies below 10 GHz to study the response of these coatings and their modified surfaces under the influence of RF fields and DC magnetic fields up to 9 T. Taking the FCC-hh as a reference, we will show that the surface resistance for REBCO-CCs is much lower than that of Cu. Further we show that the additional surface modifications can be optimised to minimise their impact on the surface impedance. Results from selected coatings will be presented.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB399  
About • paper received ※ 19 May 2021       paper accepted ※ 25 June 2021       issue date ※ 02 September 2021  
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FRXB06
Direct response time measurements on semiconductor photocathodes  
 
  • G. Loisch, M. Groß, D.K. Kalantaryan, C. Koschitzki, M. Krasilnikov, X. Li, O. Lishilin, D. Melkumyan, R. Niemczyk, A. Oppelt, H.J. Qian, F. Stephan, G. Vashchenko, T. Weilbach
    DESY Zeuthen, Zeuthen, Germany
  • Y. Chen, S. Lederer
    DESY, Hamburg, Germany
  • L. Monaco, D. Sertore
    INFN/LASA, Segrate (MI), Italy
  • R. Valizadeh
    STFC/DL/ASTeC, Daresbury, Warrington, Cheshire, United Kingdom
 
  Semiconductor photocathodes like Cs2Te enable stable electron sources with high photon to electron conversion rate (quantum efficiency, QE) for high brightness photoinjectors. Besides QE, work function and vacuum stability, bunch lengthening is a key figure of merit for these sources, resulting from UV photon penetration into the semiconductor and scattering of excited electrons before emission. These processes and their statistical variation lead to a delay, as well as to lengthening of the extracted electron bunch w.r.t. the incident laser pulse, often referred to as "response time". Thus far, no direct measurement of the response time of Cs2Te, one of the most widely used cathode materials, has been reported. As such a measurement is crucial for photocathode laser based bunch shaping, short bunch applications, emission modeling and for evaluating new cathode materials like CsKSb, a measurement procedure has been established at the photoinjector test facility at DESY in Zeuthen (PITZ) to measure longitudinal bunch shape variation due to cathode emission effects. Here, we introduce the method and show first results on direct cathode response measurements of Cs2Te cathodes.  
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