| Paper | Title | Page |
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FRXB06 |
Direct response time measurements on semiconductor photocathodes | |
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| Semiconductor photocathodes like Cs2Te enable stable electron sources with high photon to electron conversion rate (quantum efficiency, QE) for high brightness photoinjectors. Besides QE, work function and vacuum stability, bunch lengthening is a key figure of merit for these sources, resulting from UV photon penetration into the semiconductor and scattering of excited electrons before emission. These processes and their statistical variation lead to a delay, as well as to lengthening of the extracted electron bunch w.r.t. the incident laser pulse, often referred to as "response time". Thus far, no direct measurement of the response time of Cs2Te, one of the most widely used cathode materials, has been reported. As such a measurement is crucial for photocathode laser based bunch shaping, short bunch applications, emission modeling and for evaluating new cathode materials like CsKSb, a measurement procedure has been established at the photoinjector test facility at DESY in Zeuthen (PITZ) to measure longitudinal bunch shape variation due to cathode emission effects. Here, we introduce the method and show first results on direct cathode response measurements of Cs2Te cathodes. | ||
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