Author: Hou, H.T.
Paper Title Page
MOPAB386 Development of Nitrogen-Doping Technology for SHINE 1182
 
  • Y. Zong, X. Huang, Z. Wang
    SINAP, Shanghai, People’s Republic of China
  • J.F. Chen, H.T. Hou, D. Wang, J.N. Wu, Y.X. Zhang
    SARI-CAS, Pudong, Shanghai, People’s Republic of China
  • P.C. Dong
    Shanghai Advanced Research Institute, Pudong, Shanghai, People’s Republic of China
  • Y.W. Huang
    ShanghaiTech University, Shanghai, People’s Republic of China
  • J. Rong
    SSRF, Shanghai, People’s Republic of China
 
  The Shang­hai HIgh rep­e­ti­tion rate XFEL aNd Ex­treme light fa­cil­ity (SHINE) is under con­struc­tion, which needs six hun­dred 1.3GHz cav­i­ties with high qual­ity fac­tor. In this paper, we pre­sent the newest stud­ies on sin­gle cell cav­i­ties with ni­tro­gen dop­ing and cold EP treat­ment, show­ing an ob­vi­ous im­prove­ment com­pared with the pre­vi­ous re­sults.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-MOPAB386  
About • paper received ※ 21 May 2021       paper accepted ※ 08 June 2021       issue date ※ 20 August 2021  
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