Author: Hou, H.T.
Paper Title Page
MOPAB386 Development of Nitrogen-Doping Technology for SHINE 1182
 
  • Y. Zong, X. Huang, Z. Wang
    SINAP, Shanghai, People’s Republic of China
  • J.F. Chen, H.T. Hou, D. Wang, J.N. Wu, Y.X. Zhang
    SARI-CAS, Pudong, Shanghai, People’s Republic of China
  • P.C. Dong
    Shanghai Advanced Research Institute, Pudong, Shanghai, People’s Republic of China
  • Y.W. Huang
    ShanghaiTech University, Shanghai, People’s Republic of China
  • J. Rong
    SSRF, Shanghai, People’s Republic of China
  
  The Shanghai HIgh repetition rate XFEL aNd Extreme light facility (SHINE) is under construction, which needs six hundred 1.3GHz cavities with high quality factor. In this paper, we present the newest studies on single cell cavities with nitrogen doping and cold EP treatment, showing an obvious improvement compared with the previous results.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-MOPAB386  
About • paper received ※ 21 May 2021       paper accepted ※ 08 June 2021       issue date ※ 20 August 2021  
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