Author: Hong, Y.
Paper Title Page
TUPAB362 Physical Design of Electrostatic Deflector in CSNS Muon Source 2360
 
  • Y.W. Wu, S. Li, J.Y. Tang, X. Wu
    IHEP, Beijing, People’s Republic of China
  • C.D. Deng, Y. Hong
    DNSC, Dongguan, People’s Republic of China
  • Y.Q. Liu
    IHEP CSNS, Guangdong Province, People’s Republic of China
 
  CSNS will build a muon source at the end of the RTBT. In the current design, the muon source propose two schemes, namely the baseline scheme and the baby scheme. High voltage electrostatic deflectors (ESD) are used to deflect the beam in the two schemes. A three-channel ESD with 400 kV HV is employed in the baseline scheme and a 210 kV dual-channel ESD in the simplified scheme. According to physical requirements, the electric field concentration factor is introduced, and the electrode of ESD is theoretically designed. 2D and 3D simulations are carried out to analyze the characteristics of electric field distribution by OPERA. The geometry of the electrodes also met the requirements of electric field uniformity, high voltage resistance and mechanical strength at the same time. In the baseline scheme and the baby scheme, the ESD electric field concentration factors are 1.36 and 1.53, and the maximum electric field is 6.78MV/m and 4.6MV/m, respectively. The design meets the requirements and is reasonably feasible.  
poster icon Poster TUPAB362 [2.214 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB362  
About • paper received ※ 13 May 2021       paper accepted ※ 09 June 2021       issue date ※ 22 August 2021  
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