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TUPAB362 |
Physical Design of Electrostatic Deflector in CSNS Muon Source |
2360 |
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- Y.W. Wu, S. Li, J.Y. Tang, X. Wu
IHEP, Beijing, People’s Republic of China
- C.D. Deng, Y. Hong
DNSC, Dongguan, People’s Republic of China
- Y.Q. Liu
IHEP CSNS, Guangdong Province, People’s Republic of China
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CSNS will build a muon source at the end of the RTBT. In the current design, the muon source propose two schemes, namely the baseline scheme and the baby scheme. High voltage electrostatic deflectors (ESD) are used to deflect the beam in the two schemes. A three-channel ESD with 400 kV HV is employed in the baseline scheme and a 210 kV dual-channel ESD in the simplified scheme. According to physical requirements, the electric field concentration factor is introduced, and the electrode of ESD is theoretically designed. 2D and 3D simulations are carried out to analyze the characteristics of electric field distribution by OPERA. The geometry of the electrodes also met the requirements of electric field uniformity, high voltage resistance and mechanical strength at the same time. In the baseline scheme and the baby scheme, the ESD electric field concentration factors are 1.36 and 1.53, and the maximum electric field is 6.78MV/m and 4.6MV/m, respectively. The design meets the requirements and is reasonably feasible.
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Poster TUPAB362 [2.214 MB]
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB362
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About • |
paper received ※ 13 May 2021 paper accepted ※ 09 June 2021 issue date ※ 22 August 2021 |
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