Author: Dastan, S.
Paper Title Page
TUPAB245 WAKEFIELD AND HEAT LOAD STUDY OF THE GATE VALVES AT ILSF STORAGE RING 2018
 
  • N. Khosravi, E. Ahmadi, M. Akhyani
    ILSF, Tehran, Iran
  • M. Akhyani
    EPFL, Lausanne, Switzerland
  • S. Dastan
    IPM, Tehran, Iran
  • A. Khosravi
    LAPRI, Tehran, Iran
 
  As one part of the ILSF storage ring, the rf-shield of the gate valves generates considerable interest in terms of wake impedance and heat-load. Inside the gate valves, there is a vacuity, which causes low frequencies resonances, and it can lead to beam instabilities. Therefore, controlling and eliminating these frequencies will be substantial. A radio frequency rf-shield structure, which conceals this transverse gap of the gate valves, is indispensable for low emittance chambers. This paper analyzes the wake impedance and thermal behavior of a finger-band RF shield in the gate valve.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB245  
About • paper received ※ 16 May 2021       paper accepted ※ 14 June 2021       issue date ※ 13 August 2021  
Export • reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)