| Paper |
Title |
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| TUPAB245 |
WAKEFIELD AND HEAT LOAD STUDY OF THE GATE VALVES AT ILSF STORAGE RING |
2018 |
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- N. Khosravi, E. Ahmadi, M. Akhyani
ILSF, Tehran, Iran
- M. Akhyani
EPFL, Lausanne, Switzerland
- S. Dastan
IPM, Tehran, Iran
- A. Khosravi
LAPRI, Tehran, Iran
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As one part of the ILSF storage ring, the rf-shield of the gate valves generates considerable interest in terms of wake impedance and heat-load. Inside the gate valves, there is a vacuity, which causes low frequencies resonances, and it can lead to beam instabilities. Therefore, controlling and eliminating these frequencies will be substantial. A radio frequency rf-shield structure, which conceals this transverse gap of the gate valves, is indispensable for low emittance chambers. This paper analyzes the wake impedance and thermal behavior of a finger-band RF shield in the gate valve.
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2021-TUPAB245
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| About • |
paper received ※ 16 May 2021 paper accepted ※ 14 June 2021 issue date ※ 13 August 2021 |
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