IPAC2019 - List of Authors (Tokuchi, A.)

Paper	Title	Page
THPRB036	Development of Injection and Extraction Kickers for SuperKEKB Damping Ring	3890
	M. Tawada, M. Kikuchi, Y. Sakamoto, H. Someya KEK, Ibaraki, Japan K. Tenjin, A. Tokuchi Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
	SuperKEKB is a double ring asymmetric collider to study the B meson physics, which is an upgrade project of KEKB. The 7 GeV electron (HER) and the 4 GeV positron ring (LER) collides at an interaction point. The positron beam produced by linac cannot meet the dynamic aperture restrictions of LER. Damping ring (DR) is required to reduce its injection emittance. Damping ring (DR) for SuperKEKB has two kicker magnets for the injection and the extraction, respectively. These kickers are required to meet the following specifications: (1) rise and fall time does not exceed 100 ns, (2) two bunches which are 96 ns apart must be kicked by single pulse, (3) the stability of peak current for the extraction kickers must be less than 0.1 %. Kicker magnets are designed as a conventional kicker with a ferrite core. The pulse shape is a double half sine for the two bunch injection. In order to achieve short rise time, a saturable inductance is used. The design and performance of kicker magnets and the power supplies are reported.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-THPRB036
About •	paper received ※ 15 May 2019 paper accepted ※ 23 May 2019 issue date ※ 21 June 2019
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FRXXPLM3	Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFET	4364
	K. Okamura, F. Naito, K. Takayama KEK, Ibaraki, Japan K. Fukuda, H. Kitai, K. Sakamoto AIST, Tsukuba, Ibaraki, Japan T. Kaito Chiba Institute of Technology, Narashino, Chiba, Japan D. Kumamoto Nagaoka University of Technology, Nagaoka, Niigata, Japan S. Lim, A. Tokuchi Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan
	Funding: A part of this work has been implemented under a joint research project of Tsukuba Power Electronics Constellation (TPEC). To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluation test was carried out with a resistive load circuit. With the conditions of drain voltage of 10 kV and load resistance of 1 kΩ, turn on loss Eon, turn off loss Eoff, rise time Tr and fall time Tf were 1.7 mJ, 1.1 mJ, 64 ns, and 75 ns, respectively. As to gate charge characteristics, required electric charge to increase gate source voltage from 0 V to 20 V was about 80 nC. Thereafter, the 2s-12p switch array was designed and assembled, where 12 MOSFETs are equally aligned on a circle shaped circuit board and two circuit boards are stacked in series. A 14 kV-490 A-5 us pulse with a rise time of 430 ns in the long pulse mode and a 18 kV-318 A-1 us pulse with a rise time of 289 ns in the short pulse mode were successfully demonstrated. This switch will be installed as a turn-off switch for the injec-tion ES kicker in the KEK-DA.
	Slides FRXXPLM3 [5.088 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-FRXXPLM3
About •	paper received ※ 15 May 2019 paper accepted ※ 21 May 2019 issue date ※ 21 June 2019
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Development of Injection and Extraction Kickers for SuperKEKB Damping Ring

3890

M. Tawada, M. Kikuchi, Y. Sakamoto, H. Someya
KEK, Ibaraki, Japan
K. Tenjin, A. Tokuchi
Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan

SuperKEKB is a double ring asymmetric collider to study the B meson physics, which is an upgrade project of KEKB. The 7 GeV electron (HER) and the 4 GeV positron ring (LER) collides at an interaction point. The positron beam produced by linac cannot meet the dynamic aperture restrictions of LER. Damping ring (DR) is required to reduce its injection emittance. Damping ring (DR) for SuperKEKB has two kicker magnets for the injection and the extraction, respectively. These kickers are required to meet the following specifications: (1) rise and fall time does not exceed 100 ns, (2) two bunches which are 96 ns apart must be kicked by single pulse, (3) the stability of peak current for the extraction kickers must be less than 0.1 %. Kicker magnets are designed as a conventional kicker with a ferrite core. The pulse shape is a double half sine for the two bunch injection. In order to achieve short rise time, a saturable inductance is used. The design and performance of kicker magnets and the power supplies are reported.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-THPRB036

About •

paper received ※ 15 May 2019 paper accepted ※ 23 May 2019 issue date ※ 21 June 2019

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

FRXXPLM3

Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFET

4364

K. Okamura, F. Naito, K. Takayama
KEK, Ibaraki, Japan
K. Fukuda, H. Kitai, K. Sakamoto
AIST, Tsukuba, Ibaraki, Japan
T. Kaito
Chiba Institute of Technology, Narashino, Chiba, Japan
D. Kumamoto
Nagaoka University of Technology, Nagaoka, Niigata, Japan
S. Lim, A. Tokuchi
Pulsed Power Japan Laboratory Ltd., Kusatsu-shi Shiga, Japan

Funding: A part of this work has been implemented under a joint research project of Tsukuba Power Electronics Constellation (TPEC).
To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluation test was carried out with a resistive load circuit. With the conditions of drain voltage of 10 kV and load resistance of 1 kΩ, turn on loss Eon, turn off loss Eoff, rise time Tr and fall time Tf were 1.7 mJ, 1.1 mJ, 64 ns, and 75 ns, respectively. As to gate charge characteristics, required electric charge to increase gate source voltage from 0 V to 20 V was about 80 nC. Thereafter, the 2s-12p switch array was designed and assembled, where 12 MOSFETs are equally aligned on a circle shaped circuit board and two circuit boards are stacked in series. A 14 kV-490 A-5 us pulse with a rise time of 430 ns in the long pulse mode and a 18 kV-318 A-1 us pulse with a rise time of 289 ns in the short pulse mode were successfully demonstrated. This switch will be installed as a turn-off switch for the injec-tion ES kicker in the KEK-DA.

Slides FRXXPLM3 [5.088 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2019-FRXXPLM3

About •

paper received ※ 15 May 2019 paper accepted ※ 21 May 2019 issue date ※ 21 June 2019

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)