| Paper |
Title |
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| TUPTS102 |
New Activation Techniques for Higher Charge Lifetime from GaAs Photocathodes |
2157 |
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- O.H. Rahman, M. Gaowei, W. Liu, E. Wang
BNL, Upton, Long Island, New York, USA
- J.P. Biswas
Stony Brook University, Stony Brook, USA
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GaAs is the choice of photocathode material for polarized electron sources. The well established method of activating GaAs for beam extraction is to use Cs and Oxygen to create a ’Negative Electron Affinity’(NEA) layer. However, this layer is highly sensitive to vacuum and gets damaged due to ion back bombardment in DC guns. In this work, we explore activation methods that used Tellurium in conjunction with the usual Cs and Oxygen. We report our method to activate GaAs and show charge lifetime results for our activation method. Our results show that the use of Te could potentially help with longer charge lifetimes from GaAs cathodes in DC guns.
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2019-TUPTS102
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| About • |
paper received ※ 14 May 2019 paper accepted ※ 19 May 2019 issue date ※ 21 June 2019 |
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