IPAC2018 - List of Authors (Sy, A.V.)

Paper	Title	Page
MOPML052	The Path to Compact, Efficient Solid-State Transistor-Driven Accelerators	520
	D.C. Nguyen, C.E. Buechler, G.E. Dale, R.L. Fleming, M.A. Holloway, J.W. Lewellen, D. Patrick LANL, Los Alamos, New Mexico, USA V.A. Dolgashev, E.N. Jongewaard, E.A. Nanni, J. Neilson, A.V. Sy, S.G. Tantawi SLAC, Menlo Park, California, USA
	Funding: Research presented in this work is supported by (LANL) Laboratory Directed Research and Development 20170521ER and by (SLAC) Department of Energy contract DE-AC02-76SF00515. Small, lightweight, few-MeV electron accelerators that can operate with low-voltage power sources, e.g., solid-state transistors running on 50 VDC, instead of high-voltage klystrons, will provide a new tool to enhance existing applications of accelerators as well as to initiate new ones. Recent advances in gallium nitride (GaN) semiconductor technologies * have resulted in a new class of high-power RF solid-state devices called high-electron mobility transistors (HEMTs). These HEMTs are capable of generating a few hundred watts at S-, C- and X-bands at 10% duty factor. We have characterized a number of GaN HEMTs and verified they have suitable RF characteristics to power accelerator cavities *. We have measured energy gain as a function of RF power in a single low-beta C-band cavity. The HEMT powered RF accelerators will be compact and efficient, and they can operate off the low-voltage DC power buses or batteries. These all-solid-state accelerators are also more robust, less likely to fail, and are easier to maintain and operate. In this poster, we present the design of a low-beta, 5.1-GHz cavity and beam dynamics simulations showing continuous energy gain in a ten-cavity C-band prototype. See for example, http://www.wolfspeed.com/downloads/dl/file/id/463/product/174/cghv59350.pdf ** J.W. Lewellen et al., Proceedings of LINAC2016, Paper MO3A03
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-MOPML052
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WEXGBF1	Testing of the ESS MB-IOT Prototypes	1759
	M. Jensen ESS, Lund, Sweden C. Bel, A. Beunas, D. Bussiere, P. Cacheux, V. Hermann, J.C. Racamier, C. Robert TED, Thonon, France M. Boyle, H. Schult L-3, Williamsport, Pennsylvania, USA G. Cipolla, E. Montesinos, M.S.B. Sanchez Barrueta CERN, Geneva 23, Switzerland T. Kimura, P.E. Kolda, P. Krzeminski, L. Kurek, S. Lenci, O.S. Sablic, L. Turek, C. Yates CPI, Palo Alto, California, USA M.F. Kirshner LANL, Los Alamos, New Mexico, USA R.D. Kowalczyk, A.V. Sy, B.R. Weatherford SLAC, Menlo Park, California, USA A. Zubyk L3 EDD, Williamsport, USA
	ESS is considering the use of MB-IOTs for parts of the high-beta linac. Two prototypes have been built by indus-try, namely L3 and CPI/Thales and have passed the factory acceptance test with excellent results. Both tubes will go through further extensive testing at CERN for ESS follow-ing delivery and a final decision on tube technology will be taken in April 2018. This invited talk presents the back-ground for the technical decision of IOTs vs klystrons, associated impact for ESS, and latest plans for industrial production of these IOTs for ESS.
	Slides WEXGBF1 [9.836 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-WEXGBF1
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Paper

Title

Page

The Path to Compact, Efficient Solid-State Transistor-Driven Accelerators

520

D.C. Nguyen, C.E. Buechler, G.E. Dale, R.L. Fleming, M.A. Holloway, J.W. Lewellen, D. Patrick
LANL, Los Alamos, New Mexico, USA
V.A. Dolgashev, E.N. Jongewaard, E.A. Nanni, J. Neilson, A.V. Sy, S.G. Tantawi
SLAC, Menlo Park, California, USA

Funding: Research presented in this work is supported by (LANL) Laboratory Directed Research and Development 20170521ER and by (SLAC) Department of Energy contract DE-AC02-76SF00515.
Small, lightweight, few-MeV electron accelerators that can operate with low-voltage power sources, e.g., solid-state transistors running on 50 VDC, instead of high-voltage klystrons, will provide a new tool to enhance existing applications of accelerators as well as to initiate new ones. Recent advances in gallium nitride (GaN) semiconductor technologies * have resulted in a new class of high-power RF solid-state devices called high-electron mobility transistors (HEMTs). These HEMTs are capable of generating a few hundred watts at S-, C- and X-bands at 10% duty factor. We have characterized a number of GaN HEMTs and verified they have suitable RF characteristics to power accelerator cavities **. We have measured energy gain as a function of RF power in a single low-beta C-band cavity. The HEMT powered RF accelerators will be compact and efficient, and they can operate off the low-voltage DC power buses or batteries. These all-solid-state accelerators are also more robust, less likely to fail, and are easier to maintain and operate. In this poster, we present the design of a low-beta, 5.1-GHz cavity and beam dynamics simulations showing continuous energy gain in a ten-cavity C-band prototype.
* See for example, http://www.wolfspeed.com/downloads/dl/file/id/463/product/174/cghv59350.pdf
** J.W. Lewellen et al., Proceedings of LINAC2016, Paper MO3A03

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-MOPML052

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

WEXGBF1

Testing of the ESS MB-IOT Prototypes

1759

M. Jensen
ESS, Lund, Sweden
C. Bel, A. Beunas, D. Bussiere, P. Cacheux, V. Hermann, J.C. Racamier, C. Robert
TED, Thonon, France
M. Boyle, H. Schult
L-3, Williamsport, Pennsylvania, USA
G. Cipolla, E. Montesinos, M.S.B. Sanchez Barrueta
CERN, Geneva 23, Switzerland
T. Kimura, P.E. Kolda, P. Krzeminski, L. Kurek, S. Lenci, O.S. Sablic, L. Turek, C. Yates
CPI, Palo Alto, California, USA
M.F. Kirshner
LANL, Los Alamos, New Mexico, USA
R.D. Kowalczyk, A.V. Sy, B.R. Weatherford
SLAC, Menlo Park, California, USA
A. Zubyk
L3 EDD, Williamsport, USA

ESS is considering the use of MB-IOTs for parts of the high-beta linac. Two prototypes have been built by indus-try, namely L3 and CPI/Thales and have passed the factory acceptance test with excellent results. Both tubes will go through further extensive testing at CERN for ESS follow-ing delivery and a final decision on tube technology will be taken in April 2018. This invited talk presents the back-ground for the technical decision of IOTs vs klystrons, associated impact for ESS, and latest plans for industrial production of these IOTs for ESS.

Slides WEXGBF1 [9.836 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-WEXGBF1

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)