Author: Bharadwaj, V.
Paper Title Page
TUPAB139 Design of an X-Band Photoinjector Operating at 1 kHz 1659
 
  • W.S. Graves, A.C. Goodrich, M.R. Holl, N.J. O'Brien
    Arizona State University, Tempe, USA
  • V. Bharadwaj, P. Borchard
    Tibaray Inc., Stanford, USA
  • V.A. Dolgashev, E.A. Nanni
    SLAC, Menlo Park, California, USA
 
  A kHz repetition rate RF photoinjector with novel features has been designed for the ASU CXLS project. The photoinjector consists of a 9.3 GHz 4.5 cell standing-wave RF cavity that is constructed from 2 halves. The halves are brazed together, with the braze joint bisecting the irises and cells, greatly simplifying its construction. The cathode is brazed onto this assembly. RF power is coupled into the cavity through inline circular waveguide using a demountable TM01 mode launcher. The mode launcher feeds the power through 4 ports distributed azimuthally to eliminate both dipole and quadrupole field distortions. The brazed-in cathode and absence of complex power coupler result in a very inexpensive yet high performance device. The clean design allows the RF cavity to sit entirely within the solenoid assembly. The cathode gradient is 120 MV/m at 3 MW of input power. The cathode cell is just 0.17 RF wavelength so that laser arrival phase for peak acceleration is 70 degrees from zero crossing resulting in exit energy of 4 MeV. The photoinjector will operate with 1μs pulses at 1 kHz, dissipating 3 kW of heat. Details of the design are presented.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2017-TUPAB139  
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