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TY - CONF AU - Kim, H.S. AU - Cho, Y.-S. AU - Kwon, H.-J. AU - Song, Y.G. AU - Yun, S.P. ED - Schaa, Volker RW ED - Arduini, Gianluigi ED - Pranke, Juliana ED - Seidel, Mike ED - Lindroos, Mats TI - Development of 1 MeV/n RFQ for Ion Beam Irradiation J2 - Proc. of IPAC2017, Copenhagen, Denmark, 14â19 May, 2017 C1 - Copenhagen, Denmark T2 - International Particle Accelerator Conference T3 - 8 LA - english AB - For the purpose of the ion beam irradiation, especially for helium beam application to semiconductor industry, an ion beam RFQ is under development at KOMAC (Korea Multi-purpose Accelerator Complex). The output energy of the RFQ is determined to be 1 MeV/n, which corresponds to 4 MeV in helium beam case, in consideration of the penetration depth in the silicon substrate. The RFQ is a four-vane type and will be fabricated through vacuum brazing technique. The RF power of 130 kW at 200 MHz will be provided to the RFQ by using a solid-state RF amplifier through two coaxial RF couplers with coaxial RF windows. The details of the RFQ development including some design features and fabrication methods will be given in this paper. PB - JACoW CP - Geneva, Switzerland SP - 2343 EP - 2345 KW - rfq KW - ion KW - cavity KW - ion-source KW - vacuum DA - 2017/05 PY - 2017 SN - 978-3-95450-182-3 DO - 10.18429/JACoW-IPAC2017-TUPVA108 UR - http://jacow.org/ipac2017/papers/tupva108.pdf ER -