Author: Sasaki, S.
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MOPMB028 Development of Beam Diagnostic System for the SPring-8 Upgrade 149
 
  • H. Maesaka, T. Ohshima, Y. Otake
    RIKEN SPring-8 Center, Sayo-cho, Sayo-gun, Hyogo, Japan
  • H. Dewa, T. Fujita, K. Kobayashi, M. Masaki, S. Matsubara, T. Nakamura, S. Sasaki, S. Takano
    JASRI/SPring-8, Hyogo-ken, Japan
 
  The goal of the beam diagnostic system for the SPring-8 upgrade is to deliver brilliant X-rays enabled by the new low-emittance ring to experimental stations with ultimate stability. Developments of accurate electron and photon beam position monitors (EBPM and XBPM, respectively) with both short and long-term stability are the most critical. The EBPM sensitivity is also crucial for low-current beam commissioning to accomplish the first beam storage in the ring. We designed a button electrode to obtain sufficiently high-intensity signals while suppressing high-Q trapped modes leading to impedance and heating issues. We also designed a precise EBPM block and a rigid support to achieve mechanical accuracy and stability. Another challenge is the development of a reliable and stable XBPM, which should be an accurate reference for an orbit feedback without any photon-energy dependences. A significant improvement of a blade-type XBPM or an invention of a novel XBPM detecting the core of an intense X-ray beam are necessary. The other diagnostic instrumentations can be utilized for the new ring with minor improvements.  
DOI • reference for this paper ※ DOI:10.18429/JACoW-IPAC2016-MOPMB028  
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WEPOW023 Present Status of Accelerators in Aichi Synchrotron Radiation Center 2877
 
  • Y. Takashima, M. Hosaka, A. Mano
    Nagoya University, Nagoya, Japan
  • Y. Hori, N. Yamamoto
    KEK, Ibaraki, Japan
  • M. Katoh
    UVSOR, Okazaki, Japan
  • S. Koda
    SAGA, Tosu, Japan
  • S. Sasaki
    JASRI/SPring-8, Hyogo, Japan
  • T. Takano
    Hitachi Ltd., Ibaraki-ken, Japan
 
  Aichi Synchrotron Radiation Center is the newest synchrotron radiation facility in Japan. The construction was started in 2010 and the facility was opened for public use on March 26, 2013. The circumference of the storage ring is 72 m with the electron energy of 1.2 GeV, the beam current of 300 mA and the natural emittance of about 53 nmrad. The beam is injected from a booster synchrotron with the energy of 1.2 GeV as full energy injection and the top-up operation has been carried out routinely with stored current of 300 mA since opened for public use. We have tested a pulsed multi-pole magnet for improving the deviation of the orbit of stored beam during the top-up beam injection. The storage ring consists of four triple bend cells. Eight of the twelve bending magnets are normal conducting ones. Four of them are 5 T superconducting magnets(superbend) of which bending angle is 12 degrees. The superbends are running without any trouble with refrigerator maintenance once per year. The accelerators have been operated about 1400 hours stable in a year. Eight of the synchrotron radiation beamlines have been operational for public use and other two beamlines are under construction.  
DOI • reference for this paper ※ DOI:10.18429/JACoW-IPAC2016-WEPOW023  
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THPMW020 Solid-state Compact Kicker Pulsar using Strip-line Type Blumlein with SIC-MOSFET in Spring-8 3585
 
  • C. Mitsuda, T. Honiden, K. Kobayashi, T. Kobayashi, S. Sasaki
    JASRI/SPring-8, Hyogo-ken, Japan
  • N. Sekine
    Sekine Electric Works Co. Ltd, Osaka, Japan
 
  In the case of handling the electron beam by bunch-by-bunch and turn-by-turn with a kicker at the SPring-8, the performances required to a pulsar are short pulse width (<40ns) and high repetitions (>208kHz). In order to achieve these specifications, the short pulsed high voltage output and the utilization of the solid-state switch is necessary for an inductance load. In order to suppress the supplied voltage as low as as possible, it is an important feature to realize the extremely small-sized pulsar to be set near the kicker. On the basis of the experiences in developing the solid-state pulsar of 400ns/2kV using Si-MOSFET*, combination of the SiC-MOSFET and the strip-line type Blumlein pulse forming network (BPFN) was applied to the prototype driver to achieve a shorter pulse and higher power than Si-type driver. The completed pulsar accomplished a compact size (external dimensions; 300(H)x400(W)x400(D)mm). Furthermore, the targeted short-pulsed high voltage output of 123ns/12kV was obtained by 6 BPFNs serial connection to the load inductance of 800 nH. The BPFN detailed design to enable the compact size, high reliability and stability at high repetitions will be reported.
* C.Mitsuda et al., Proc. of IPAC2013, MOPAWA003
 
DOI • reference for this paper ※ DOI:10.18429/JACoW-IPAC2016-THPMW020  
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