Author: Kobayashi, T.
Paper Title Page
THPMW020 Solid-state Compact Kicker Pulsar using Strip-line Type Blumlein with SIC-MOSFET in Spring-8 3585
 
  • C. Mitsuda, T. Honiden, K. Kobayashi, T. Kobayashi, S. Sasaki
    JASRI/SPring-8, Hyogo-ken, Japan
  • N. Sekine
    Sekine Electric Works Co. Ltd, Osaka, Japan
 
  In the case of handling the electron beam by bunch-by-bunch and turn-by-turn with a kicker at the SPring-8, the performances required to a pulsar are short pulse width (<40ns) and high repetitions (>208kHz). In order to achieve these specifications, the short pulsed high voltage output and the utilization of the solid-state switch is necessary for an inductance load. In order to suppress the supplied voltage as low as as possible, it is an important feature to realize the extremely small-sized pulsar to be set near the kicker. On the basis of the experiences in developing the solid-state pulsar of 400ns/2kV using Si-MOSFET*, combination of the SiC-MOSFET and the strip-line type Blumlein pulse forming network (BPFN) was applied to the prototype driver to achieve a shorter pulse and higher power than Si-type driver. The completed pulsar accomplished a compact size (external dimensions; 300(H)x400(W)x400(D)mm). Furthermore, the targeted short-pulsed high voltage output of 123ns/12kV was obtained by 6 BPFNs serial connection to the load inductance of 800 nH. The BPFN detailed design to enable the compact size, high reliability and stability at high repetitions will be reported.
* C.Mitsuda et al., Proc. of IPAC2013, MOPAWA003
 
DOI • reference for this paper ※ DOI:10.18429/JACoW-IPAC2016-THPMW020  
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