Author: Lopes, R.
Paper Title Page
MOPC127 Development of High RF Power Solid State Amplifiers at SOLEIL 376
 
  • P. Marchand, M.E. El Ajjouri, R. Lopes, F. Ribeiro, T. Ruan
    SOLEIL, Gif-sur-Yvette, France
 
  In SOLEIL, 5 solid state amplifiers provide the required 352 MHz RF power: 1 x 35 kW for the booster (BO) cavity and 4 x 190 kW for the 4 superconducting cavities of the storage ring (SR). Based on a design fully developed in house, they consist in a combination of a large number of 330W elementary modules (1 x 147 in the BO and 4 x 724 in the SR) with MOSFET transistors, integrated circulators and individual power supplies. After 5 years of operation, this innovative design has proved itself and demonstrated that it was an attractive alternative to the vacuum tube amplifiers, featuring an outstanding reliability and a MTBF > 1 year. In the meantime, thanks to the acquired expertise and the arrival of the 6th generation transistors, SOLEIL has carried out developments which led to doubling the power of the elementary module (700 W at 352 MHz and 500 MHz), while improving the performance in terms of gain, efficiency and thermal stress. This approach was also extended to frequencies from the FM to L band. The increasing interest for this technology has led SOLEIL to collaborate with several other laboratories and conclude a transfer of know-how with the French company, ELTA-AREVA.