Author: Kim, G.
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WEPA15 Development of BAM Electronics in PAL-XFEL 400
 
  • D.C. Shin, J.H. Hong, H.-S. Kang, C. Kim, G. Kim, C.-K. Min
    PAL, Pohang, Kyungbuk, Republic of Korea
 
  We describe an electronics for electron bunch arrival time monitor (BAM) with a less than 10 femtosecond resolution, which was developed in 2017 and is currently in use at PAL-XFEL. When electron bunches go through an S-band monopole cavity, about 1 us long RF signal can be obtained to compare with a low phase noise RF reference. The differential phase jitter corresponds to the arrival time jitter of electron bunches. RF front-end (F/E) which converts the S-band pickup signal to intermediate frequency (IF) signal, is the essential part of a good time resolution. The digitizer and the signal processor of the BAM electronics are installed in an MTCA platform. This paper presents the design scheme, test results of the BAM electronics and future improvement plans.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IBIC2018-WEPA15  
About • paper received ※ 05 September 2018       paper accepted ※ 11 September 2018       issue date ※ 29 January 2019  
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WEPA16 Micro-Bunching Instability Monitor for X-ray Free Electron Laser 404
 
  • C. Kim, H.-S. Kang, G. Kim, I.S. Ko
    PAL, Pohang, Kyungbuk, Republic of Korea
  • J.H. Ko
    POSTECH, Pohang, Kyungbuk, Republic of Korea
 
  A direct method was developed to measure the micro-bunching instability in the X-ray Free Electron Laser (XFEL). The micro-bunching instability comes from the interaction between the electron beam and the coherent synchrotron radiation (CSR), and the FEL intensity can be affected significantly by the micro-bunching instability. However, no effective method had been introduced to monitor the micro-bunching instability, so that we installed a CCD camera to measure the micro-bunching instability after the bunch compressor. The CCD camera showed the micro-bunching instability successfully, and more interesting features of the micro-bunching instability were revealed from it.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IBIC2018-WEPA16  
About • paper received ※ 09 September 2018       paper accepted ※ 11 September 2018       issue date ※ 29 January 2019  
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WEPB09 Wire Scanner Measurements at the PAL-XFEL 445
 
  • G. Kim, H.-S. Kang, C. Kim, B.G. Oh, D.C. Shin
    PAL, Pohang, Republic of Korea
 
  The PAL-XFEL, an X-ray Free electron laser user facility based on a 10 GeV normal conducting linear accelerator, have been operational at Pohang, South Korea. The wire scanners are installed for transverse beam profile measurement of the Linac and the Hard X-ray undulator section. The wire scanner is a useful device for emittance measurements in the Hard X-ray undulator section. In this paper, we describe the details of the wire scanner and the results of the measurements.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IBIC2018-WEPB09  
About • paper received ※ 05 September 2018       paper accepted ※ 12 September 2018       issue date ※ 29 January 2019  
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