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TY - CONF AU - Shin, D.C. AU - Hong, J.H. AU - Kang, H.-S. AU - Kim, C. AU - Kim, G. AU - Min, C.-K. ED - Schaa, Volker RW TI - Development of BAM Electronics in PAL-XFEL J2 - Proc. of IBIC2018, Shanghai, China, 09-13 September 2018 CY - Shanghai, China T2 - International Beam Instrumentation Conference T3 - 7 LA - english AB - We describe an electronics for electron bunch arrival time monitor (BAM) with a less than 10 femtosecond resolution, which was developed in 2017 and is currently in use at PAL-XFEL. When electron bunches go through an S-band monopole cavity, about 1 us long RF signal can be obtained to compare with a low phase noise RF reference. The differential phase jitter corresponds to the arrival time jitter of electron bunches. RF front-end (F/E) which converts the S-band pickup signal to intermediate frequency (IF) signal, is the essential part of a good time resolution. The digitizer and the signal processor of the BAM electronics are installed in an MTCA platform. This paper presents the design scheme, test results of the BAM electronics and future improvement plans. PB - JACoW Publishing CP - Geneva, Switzerland SP - 400 EP - 403 KW - electron KW - electronics KW - pick-up KW - controls KW - site DA - 2019/01 PY - 2019 SN - 978-3-95450-201-1 DO - DOI: 10.18429/JACoW-IBIC2018-WEPA15 UR - http://jacow.org/ibic2018/papers/wepa15.pdf ER -