| Paper |
Title |
Page |
| THP044 |
The Simulation Study for Single and Multi Turn ERL Based EUV FEL |
677 |
| |
- K.M. Nam, G.S. Yun
POSTECH, Pohang, Kyungbuk, Republic of Korea
- Y.W. Parc
PAL, Pohang, Kyungbuk, Republic of Korea
|
|
| |
Photolithography technology is the core part of the semiconductor manufacturing process. It has required light having stronger power for higher throughput. ERL based EUV FEL is emerging as a next generation EUV source which can produce the light over 10 kW. In this study, first, EUV-FEL design, which is based on single turn, is represented. It accelerates 40 pC electron beam to 600 MeV and produces EUV, whose wavelength and power are 13.5 nm and 37 kW. Second, multiturn based design is represented. It improved compactness to make it more suitable for industrial use. As a result, the electron beam was able to obtain the kinetic energy and circulate, and the size was reduced to about half without reducing the power greatly. This study is expected to increase the practical industrialization potential of ERL-based photolithography.
|
|
|
Poster THP044 [0.584 MB]
|
|
| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-FEL2019-THP044
|
|
| About • |
paper received ※ 20 August 2019 paper accepted ※ 28 August 2019 issue date ※ 05 November 2019 |
|
| Export • |
reference for this paper using
※ BibTeX,
※ LaTeX,
※ Text/Word,
※ RIS,
※ EndNote (xml)
|
|
| |