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| WEP089 |
Pulse Energy Measurement at the SXFEL |
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- Z.P. Liu, H.X. Deng, C. Feng, B. Liu, D. Wang, L.Y. Yu
SINAP, Shanghai, People’s Republic of China
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The test facility is going to generate 8.8 nm FEL radiation using an 840 MeV electron linac passing through the two-stage cascaded HGHG-HGHG or EEHG-HGHG (high-gain harmonic generation, echo-enabled harmonic generation) scheme. Several methods have been developed to measure the power of pulse. The responsivity of silicon photodiode having no loss in the entrance window. Silicon photodiode reach saturates at the SXFEL. In this work, we simulated the attenuator transmittance for different thicknesses. We also show the preparations of the experiment results at the SXFEL .
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| DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-FEL2019-WEP089
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| About • |
paper received ※ 20 August 2019 paper accepted ※ 28 August 2019 issue date ※ 05 November 2019 |
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