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BiBTeX citation export for WEXZO01: High Intensity Ion Beam Extraction System for FECR

@unpublished{shen:ecris2020-wexzo01,
  author       = {Z. Shen and X. Fang and J.W. Guo and Z.H. Jia and Y.G. Liu and W. Lu and L.T. Sun and Y. Yang and X.Z. Zhang and H.W. Zhao},
% author       = {Z. Shen and X. Fang and J.W. Guo and Z.H. Jia and Y.G. Liu and W. Lu and others},
% author       = {Z. Shen and others},
  title        = {{High Intensity Ion Beam Extraction System for FECR}},
  booktitle    = {Proc. ECRIS'20},
  language     = {english},
  intype       = {presented at the},
  series       = {International Workshop on ECR Ion Sources},
  number       = {24},
  venue        = {East Lansing, MI, USA},
  publisher    = {JACoW Publishing, Geneva, Switzerland},
  month        = {07},
  year         = {2022},
  note         = {presented at ECRIS'20 in East Lansing, MI, USA, unpublished},
  abstract     = {{To meet the beam requirements of High Intensity heavy ion Accelerator Facility (HIAF), the Institute of Modern Physics is developing a Fourth generation ECR ion source (FECR). Targeting at the operation frequency of 45 GHz, FECR is expected to produce very high intensity highly charged heavy ion beams, such as 1.0 emA ²³⁸U³⁵⁺, 2 emA ⁷⁸Kr¹⁹⁺, 10 emA ¹⁶O⁶⁺, etc. Based on the records with the 3rd generation ECR ion source operating at 24-28 GHz, the corresponding total drain current of FECR could reach 20-60 emA. To extract such high intensity multi-charged ion beams from the source with high beam quality and transmission efficiency, conventional diode or triode extraction system might not be suitable, and therefore a 4-electrode extraction system with a total extraction voltage of 50 kV is designed to mitigate the space charge influences and minimize the beam emittance growth in the extraction region. In this paper, a 3D model of the FECR extraction system is built using the IBSimu code. The electrode angles, voltages and electrode spacings are optimized for different ion beam conditions respectively. Beam properties comparison of various simulation conditions are presented.}},
}