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TY - CONF AU - Higurashi, Y. AU - Haba, H. AU - Kidera, M. AU - Nakagawa, T. AU - Ohnishi, J. AU - Ozeki, K. ED - Schaa, Volker RW TI - Recent Developments of RIKEN 28 GHz SC-ECRIS J2 - Proc. of ECRIS2016, Busan, Korea, August 28 - September 1, 2016 C1 - Busan, Korea T2 - International Workshop on ECR Ion Sources T3 - 22 LA - english AB - In the past two years, we tried to improve the performance of the RIKEN 28GHz SC-ECRIS for production of intense U ion beam. Usually, we used the sputtering method to produce U ion beam. Last year, we produced ~200e μA of U³⁵⁺ at the injected RF power of ~2.6kW, when slightly adding the U vapor with high temperature oven. For RIKEN RIBF experiment, we produced ~110 e μA of U³⁵⁺ beam with sputtering method longer than one month without break. In this case, we surly need very stable beam to increase the transmission efficiency in the accelerators and avoid the any damage of the components of the accelerator due to the high power beam. In this contribution, we will report the beam intensity of highly charged U ions as a function of various parameters (magnetic field strength, RF power, sputtering voltage etc.) and the effect of these parameters on the beam stability in detail. We also present the experience of the long term operation of the ion source for the RIKEN RIBF experiments. PB - JACoW CP - Geneva, Switzerland SP - 10 EP - 13 KW - ion KW - experiment KW - ECR KW - emittance KW - ion-source DA - 2016/10 PY - 2016 SN - 978-3-95450-186-1 DO - 10.18429/JACoW-ECRIS2016-MOBO04 UR - http://jacow.org/ecris2016/papers/mobo04.pdf ER -