| Paper |
Title |
Page |
| MOPCH178 |
Tests on MgB2 for Application to SRF Cavities
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481 |
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- T. Tajima
LANL, Los Alamos, New Mexico
- I.E. Campisi
ORNL, Oak Ridge, Tennessee
- A. Canabal-Rey
NMSU, Las Cruces, New Mexico
- Y. Iwashita
Kyoto ICR, Uji, Kyoto
- B. Moeckly
STI, Santa Barbara, California
- C.D. Nantista, S.G. Tantawi
SLAC, Menlo Park, California
- H.L. Phillips
Jefferson Lab, Newport News, Virginia
- A.S. Romanenko
Cornell University, Laboratory for Elementary-Particle Physics, Ithaca, New York
- Y. Zhao
University of Wollongong, Institute of Superconducting and Electronic Materials, Wollongong
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Magnesium diboride (MgB2) has a transition temperature (Tc) of ~40 K, i.e., about four times higher than niobium (Nb). The studies in the last three years have shown that it could have about one order of magnitude less RF surface resistance (Rs) than Nb and seems much less power dependent compared to high-Tc materials such as YBCO. In this paper we will present results on the dependence of Rs on surface magnetic fields and possibly the critical RF surface magnetic field.
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| WEPLS085 |
Study of RF Breakdown in Normal Conducting Structures with Various Geometries and Materials
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0 |
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- V.A. Dolgashev, S.G. Tantawi
SLAC, Menlo Park, California
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RF breakdown is one of the major factors determining performance of high power rf components, rf sources and accelerating structures. We study the breakdown in 11 GHz high gradient waveguides at rf powers reaching 300 MW. We tested rectangular waveguides of two geometries which have increased surface electric and magnetic fields in comparison with a standard WR90 waveguide. We used copper, gold, molybdenum, and stainless steel as material for the waveguides. We observe rf parameters, X-rays and visible light from breakdown events. We report the results of the conditioning of these waveguides and compare these results.
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| THPCH149 |
Active RF Pulse Compression using Electrically Controlled Semiconductor Switches
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3140 |
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- J. Guo, S.G. Tantawi
SLAC, Menlo Park, California
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In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide operating in the T·1001 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. Our current design uses a CMOS compatible process and the fabrication is accomplished at SNF (Stanford Nanofabrication Facility). The RF energy is stored in a room-temperature, high-Q 400 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 11, which is the ratio between output and input power. Power handling capability of the switch is estimated at the level of 10MW.
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