| Paper | Title | Page |
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| WEPCH181 | Ion Implantation Via Laser Ion Source | 2355 |
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| We report on the development of a new implantation technique via laser ion source. By applying a high voltage on the accelerating gap, this compact device was able to accelerate towards a substrate ions from ablation plasma. The occurrence of arcs during the extraction phase was a major problem to overcome. A pulsed KrF laser was utilized to produce plasma by ablation of solid targets. Radiation wavelength and pulse duration were 248 nm and 20 ns, respectively. The laser beam, 70 mJ per pulse, was focused onto different targets in a spot of about 1 mm2 in surface, obtaining an irradiance value of about 3.5 x 108 W/cm2. The implanted samples were characterized by energy dispersive x-ray spectroscopy, Rutherford backscattering spectrometry and x-ray photoelectron spectrometry. Implantations of Al, Cu and Ge on Si substrates were carried out up to 80 nm in depth, operating at 40 kV acceleration voltage. Ion dose was estimated by Faraday cup diagnostics. It was of the order of 1010 ions/cm2 per pulse. | ||
| THPCH139 | Development of an Ion Source via Laser Ablation Plasma | 3119 |
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| Experimental results on the development of a laser ion source (LIS) are reported. LISs are particularly useful in ion accelerators, ion implanters and devices for electromagnetic isotope separation. A focused UV laser beam (0.1 - 1 GW/cm2 power density) was used to produce a plasma plume from a Cu target. Several aspects were investigated: ion angular distribution, energy distribution, ion extraction and charge loss due to ion recombination. Particular attention was devoted to avoid arcs during the extraction phase; it was accomplished by allowing the proper plasma expansion in a suitable chamber before the extraction gap. Diagnostics on free expanding plasma and extracted ions was carried out mainly by time-of-flight measurements, performed by means of Faraday cups and electrostatic spectrometers. At 18kV acceleration voltage, the ion beam current, measured along a drift tube at 147cm from the target, resulted modulated on ion mass-to-charge ratio and its maximum value was 220uA. The Cu+1 ion bunch charge was estimated to be 4.2nC. Ion implantation tests were successfully performed at high acceleration voltage (several tens kV), by using a simple experimental arrangement. | ||
| THPCH140 | New Pulsed Current and Voltage Circuits Based on Transmission Lines | 3122 |
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| We present two novel circuits able to compress current or voltage pulse named current compressor circuit (CCC) and voltage compressor circuit (VCC), and two novel amplifier circuits able to double the current or voltage pulse. The compressing circuits were composed by a transmission line, l long and a storage line, l/2 long. The CCC compressed the current pulse by a factor of 2 doubling its intensity, while the VCC compressed the voltage pulse by a factor of 2 doubling its amplitude. The amplifying circuits were composed by a R0 transmission line closed on a set of two parallel or series storage lines which doubled the intensity of the pulses. The current pulse amplifier (CPA) had two R0/2 storage lines in parallel, while the voltage pulse amplifier (VPA) had two 2R0 storage lines in series. The storage line was half long with respect to the input-pulse. In both circuits, one storage line was characterized by an open extremity and the other line by a closed extremity. Connecting the storage lines to suitable load resistors, R0/4, and 4R0 for the CPA and VPA, respectively, a twice of the pulse intensity was obtained. The circuits were studied by computer simulations. | ||
| THPCH152 | Temporal Quantum Efficiency of a Micro-structured Cathode | 3149 |
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In this work the experimental and simulation results of photoemission studies for photoelectrons are presented*. The cathode used was a Zn disc having the emitting surface morphologically modified. Two different excimer lasers were employed like energy source to apply the photoelectron process: XeCl (308nm, 10ns) and KrF (248nm, 20ns). Experimental parameters were the laser fluence (up to 70 mJ/cm2) and the anode-cathode voltage (up to 20 kV). The output current was detected by a resistive shunt with the same value of the characteristic impedance of the sistem, about 100 ?. In this way, our device was able to record fast current signals. The best values of global quantum efficiency were approximately 5x 10-6 for XeCl and 1x 10-4 for KrF laser, while the peaks of the temporal quantum efficiency were 8x 10-6 and 1.4x10-4, respectively. The higher efficiency for KrF is ascribed to higher photon energy and to Schottky effect. Several electron-beam simulations using OPERA 3-D were carried out to analyze the influence of the geometrical characteristics of the diode. Simulating the photoemission by cathodes with micro-structures the output current was dependent on cathode roughness.
*L. Martina et al. Rev. Sci. Instrum., 73, 2552 (2002). |