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Iancu, G.

Paper Title Page
WEPCH116 Recent Simulation Results of the Polarized Electron Injector (SPIN) of the S-DALINAC 2188
 
  • B. Steiner, W.F.O. Müller, T. Weiland
    TEMF, Darmstadt
  • J. Enders, H.-D. Gräf, C. Heßler, G. Iancu, A. Richter, M. Roth
    TU Darmstadt, Darmstadt
 
  Recent design and development for a polarized electron source (SPIN) for the recirculating superconducting electron linear accelerator S-DALINAC will be presented. The polarized electron beam will be produced by photoemission from an InAlGaAs/GaAs superlattice cathode and will be accelerated to 100 kV electrostatically. The results of the beam dynamics simulation will be shown in detail. The start phase space of the electron bunch behind the gun has been approximated. The transverse focusing system consists of very short quadrupoles. Further main components of the new injector are a Wien filter, a Mott polarimeter, a chopper-prebuncher system (based on devices used at the Mainz Mikrotron MAMI), and diverse beam diagnostic tools. For the approximation of the start phase space CST MAFIA is used, and for the beam dynamic simulation VCode is used.  
THPCH161 Status of the Polarized Electron Gun at the S-DALINAC 3173
 
  • C. Heßler, M. Brunken, J. Enders, H.-D. Gräf, G. Iancu, Y. Poltoratska, M. Roth
    TU Darmstadt, Darmstadt
  • W. Ackermann, W.F.O. Müller, N. Somjit, B. Steiner, T. Weiland
    TEMF, Darmstadt
  • K. Aulenbacher
    IKP, Mainz
 
  Aiming at an extension of the experimenting capabilities for nuclear structure physics at low momentum transfer at the superconducting Darmstadt electron linear accelerator S-DALINAC, a polarized electron gun is being constructed. The new injector will be able to supply the S-DALINAC with 100 keV polarized electrons and should complement the present, unpolarized thermionic source. The design requirements are a degree of polarization of at least 80%, a mean current intensity of 0.06 mA and a 3 GHz cw structure. The basic design of the gun was adapted from the source of polarized electrons at MAMI, Mainz*, and optimized in various simulations. The active material is a strained layer GaAs crystal which is exposed to an 830 nm pulsed laser beam. We report on the status of the polarized source, the preparation setup and a test beam line.

*K. Aulenbacher et al., Nucl. Instrum. Meth. A 391, 498 (1997).