| Paper |
Title |
Page |
| TUPCH010 |
Profile Measurement by Beam Induced Fluorescence for 60 MeV/u to 750 MeV/u Heavy Ion Beams
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1013 |
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- P. Forck, C. Andre, F. Becker, H. Iwase
GSI, Darmstadt
- D. Hoffmann
TU Darmstadt, Darmstadt
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At the planned heavy ion facility FAIR very intense beams of heavy ions will be transported between various synchrotrons and focused on targets for secondary ion productions. For the transverse profile determination only non-destructive methods are suited due to the large deposed beam power. We investigated experimentally the Beam Induced Fluorescence (BIF) method. Due to the atomic collision by the beam ions the residual gas N2 is excited to fluorescence levels. Single photon detection is performed by a double MCP image intensifier coupled to a digital CCD camera. Extensive experimental studies (with the today available lower ion currents) were performed to determine the photon yield and the background contribution for different ion species and beam energies. The measured profiles show a good correspondence to other methods as long as the vacuum pressure by a regulated N2 inlet is below 10-1 mbar. Based on the experimental results, the layout for a BIF profile determination will be discussed.
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| TUPCH011 |
Innovative Beam Diagnostics for the Challenging FAIR Project
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1016 |
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- P. Forck, A. Peters
GSI, Darmstadt
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The planned FAIR facility consists of two heavy ion synchrotrons and four large storage rings. The super-conducting synchrotrons are build for high current operation and secondary ion production. A large variety of low current secondary beams is stored and cooled in the four storage rings. A complex operation scheme with multiple use of transport lines is foreseen. This demands an exceptional high dynamic range for the beam instrumentation. Due to the enormous beam power, non-destructive methods are mandatory for high currents. For the low current secondary beams, non-destructive diagnostics are also preferred due to the low repetition rate. Precise measurements of all beam parameters and automatic steering or feedback capabilities are required due to the necessary exploitation of the full ring acceptances. Moreover, online beam-corrections with short response times are mandatory for the fast ramping super-conducting magnets. Due to the ultra-high vacuum condition and the demanding measurement accuracy, novel technical solution are foreseen. An overview of the challenges and projected innovative solutions for various diagnostic installations will be given.
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| TUPCH071 |
Testing the Silicon Photomultiplier for Ionization Profile Monitor
|
1172 |
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- S.V. Barabin, D.A. Liakin, A.Y. Orlov
ITEP, Moscow
- P. Forck, T. Giacomini
GSI, Darmstadt
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A new kind of photonic device is proposed to be used in the fast operating mode of the ionization profile monitor. A silicon photomultiplier device combines the advantages of photomultipliers and solid-state photo detectors. It provides high sensitivity, wide optical spectrum response, high bandwidth and absence of 1/f noise component. Those parameters are critical in the IPM with fast readout feature, which is developing in GSI in collaboration with ITEP, COOSY, MSU and CRYRING laboratories. Very first investigations were made to obtain detailed parameters of silicon photomultiplier. A testing layout and resulting performance data are presented in this publication.
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