Paper | Title | Page |
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THPO044 | Structural Characterization of Nb Films Deposited by ECR Plasma Energetic Condensation on Crystalline Insulators | 819 |
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Funding: Authored by Jefferson Science Associates, LLC under U.S. DOE Contract No. DE-AC05-06OR23177. An energetic condensation thin film coating technique with an electron cyclotron resonance (ECR) induced plasma ion source is used to deposit Nb thin films on crystalline insulating substrates, such as a-plane and c-plane sapphire (Al2O3) and on magnesium oxide, MgO (100), (110), and (111). Heteroepitaxial Nb films were produced by ECR deposition with regulated substrate temperature. The residual resistance ratio (RRR) of about 1 micron thick films reach unprecedented values (350 - 450) on a-plane (11-20) sapphire substrates. The epitaxial relationship of Nb/crystalline substrate is found to be strongly influenced by the substrate bias voltage (adding to the initial Nb+ kinetic energy), the substrate crystalline orientation, and heating conditions. At low substrate temperature, the Nb films demonstrated non-epitaxial crystalline textures, revealed by XRD Pole Figure technique and Electron Backscattering Diffraction (EBSD). The texture might be caused by “Volmer-Weber” growth mode, i.e. island growth, at low surface adatom mobility. This study shows that the film’s crystal structural character has great impact on its RRR/Tc value. |
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