JLAB, Newport News, Virginia, USA
A new 4pi spin manipulator composed of two Wien filters oriented orthogonally and separated by two solenoids has been installed at the CEBAF/Jefferson Lab photoinjector. The new spin manipulator is used to precisely set the electron spin direction at an experiment in any direction (in or out of plane of the accelerator) and provides the means to reverse, or flip, the helicity of the electron beam on a daily basis. This reversal is being employed to suppress systematic false asymmetries that can jeopardize challenging parity violation experiments that strive to measure increasingly small physics asymmetries [*,**,***]. The spin manipulator is part of the ultra-high vacuum polarized electron source beam line and has been successfully operated with 100keV and 130keV electron beam at high current (>100 microAmps). A unique feature of the device is that spin-flipping requires only the polarity of one solenoid magnet be changed. Performance characteristics of the Two Wien Filter Spin Flipper will be summarized.
* http://hallaweb.jlab.org/parity/prex/
** http://www.jlab.org/qweak/
*** http://hallaweb.jlab.org/12GeV/Moller/
JLAB, Newport News, Virginia, USA
Old Dominion University, Norfolk, Virginia, USA
UVa, Charlottesville, Virginia, USA
Two DC high voltage GaAs photoguns have been built at Jefferson Lab based on a compact inverted insulator design. One photogun provides the polarized electron beam at CEBAF and operates at 130 kV bias voltage. The other gun is used for high average current lifetime studies at a dedicated test facility and has been operated at bias voltage up to 225 kV. The advantages of higher DC voltage for CEBAF include reduced space-charge emittance growth and the potential for prolonged photocathode lifetime. However, a consequence of operating at higher voltages is the increased likelihood of field emission or breakdown, both of which are unacceptable. Highlights of the R&D studies leading toward a production 200keV GaAs photogun for CEBAF will be presented.
BNL, Upton, Long Island, New York, USA
JLAB, Newport News, Virginia, USA
In the past decade, there has been considerable interest in the generation of tens of mA average current in a photoinjector. Until recently, GaAs:Cs cathodes and K2CsSb cathodes have been tested successfully in DC and RF injectors respectively for this application. Our goal is to test the GaAs:Cs in RF injector and the K2CsSb cathode in the DC gun in order to widen our choices. Since the multialkali cathode is a compound with uniform stochiometry over its entire thickness, we anticipate that the life time issues seen in GaAs:Cs due surface damage by ion bombardment would be minimized with this material. Hence successful operation of the K2CsSb cathode in DC gun could lead to a relatively robust electron source capable of delivering ampere level currents. In order to test the performance of K2CsSb cathode in a DC gun, we have designed and built a load lock system that would allow the fabrication of the cathode at BNL and its testing at JLab. In this paper, we will present the design of the load-lock system, cathode fabrication, and the cathode performance in the preparation chamber and in the DC gun.