Author: Stutzman, M.L.
Paper Title Page
TUP025 Two Wien Filter Spin Flipper 862
 
  • J.M. Grames, P.A. Adderley, J. F. Benesch, J. Clark, J. Hansknecht, R. Kazimi, D. Machie, M. Poelker, M.L. Stutzman, R. Suleiman, Y. Zhang
    JLAB, Newport News, Virginia, USA
 
  Funding: Authored by Jefferson Science Associates, LLC under U.S. DOE Contract No. DE-AC05-06OR23177.
A new 4pi spin manipulator composed of two Wien filters oriented orthogonally and separated by two solenoids has been installed at the CEBAF/Jefferson Lab photoinjector. The new spin manipulator is used to precisely set the electron spin direction at an experiment in any direction (in or out of plane of the accelerator) and provides the means to reverse, or flip, the helicity of the electron beam on a daily basis. This reversal is being employed to suppress systematic false asymmetries that can jeopardize challenging parity violation experiments that strive to measure increasingly small physics asymmetries [*,**,***]. The spin manipulator is part of the ultra-high vacuum polarized electron source beam line and has been successfully operated with 100keV and 130keV electron beam at high current (>100 microAmps). A unique feature of the device is that spin-flipping requires only the polarity of one solenoid magnet be changed. Performance characteristics of the Two Wien Filter Spin Flipper will be summarized.
* http://hallaweb.jlab.org/parity/prex/
** http://www.jlab.org/qweak/
*** http://hallaweb.jlab.org/12GeV/Moller/
 
 
WEODS3 CEBAF 200 kV Inverted Electron Gun 1501
 
  • J.M. Grames, P.A. Adderley, J. Clark, J. Hansknecht, M. Poelker, M.L. Stutzman, R. Suleiman, K.E.L. Surles-Law
    JLAB, Newport News, Virginia, USA
  • M. BastaniNejad
    Old Dominion University, Norfolk, Virginia, USA
  • J.L. McCarter
    UVa, Charlottesville, Virginia, USA
 
  Funding: Authored by Jefferson Science Associates, LLC under U.S. DOE Contract No. DE-AC05-06OR23177. In addition, DOE-HEP funds this work in support of the ILC R&D program.
Two DC high voltage GaAs photoguns have been built at Jefferson Lab based on a compact inverted insulator design. One photogun provides the polarized electron beam at CEBAF and operates at 130 kV bias voltage. The other gun is used for high average current lifetime studies at a dedicated test facility and has been operated at bias voltage up to 225 kV. The advantages of higher DC voltage for CEBAF include reduced space-charge emittance growth and the potential for prolonged photocathode lifetime. However, a consequence of operating at higher voltages is the increased likelihood of field emission or breakdown, both of which are unacceptable. Highlights of the R&D studies leading toward a production 200keV GaAs photogun for CEBAF will be presented.
 
slides icon Slides WEODS3 [1.360 MB]