Author: Shin, I.
Paper Title Page
WEP048 Comparison of RF Cavity Transport Models for BBU Simulations 1582
 
  • I. Shin
    University of Connecticut, Storrs, Connecticut, USA
  • S. Ahmed, T. Satogata, B.C. Yunn
    JLAB, Newport News, Virginia, USA
 
  The transverse focusing effect in RF cavities plays a considerable role in beam dynamics for low-energy beamline sections and can contribute to beam breakup (BBU) instability. The purpose of this analysis is to examine RF cavity models in simulation codes which will be used for BBU experiments at Jefferson Lab and improve BBU simulation results. We review two RF cavity models in the simulation codes elegant and TDBBU (a BBU simulation code developed at Jefferson Lab). elegant can include the Rosenzweig-Serafini (R-S) model for the RF focusing effect. Whereas TDBBU uses a model from the code TRANSPORT which considers the adiabatic damping effect, but not the RF focusing effect. Quantitative comparisons are discussed for the CEBAF beamline. We also compare the R-S model with the results from numerical simulations for a CEBAF-type 5-cell superconducting cavity to validate the use of the R-S model as an improved low-energy RF cavity transport model in TDBBU. We have implemented the R-S model in TDBBU. It will cause BBU simulation results to be better matched with analytic calculations and experimental results.  
 
WEP085 Beam Breakup Studies for New Cryo-Unit 1633
 
  • S. Ahmed, F.E. Hannon, A.S. Hofler, R. Kazimi, G.A. Krafft, F. Marhauser, B.C. Yunn
    JLAB, Newport News, Virginia, USA
  • I. Shin
    University of Connecticut, Storrs, Connecticut, USA
 
  In this paper, we report the numerical simulations of cumulative beam breakup studies for a new cryo-unit for injector design at Jefferson lab. The system consists of two 1-cell and one 7-cell superconducting RF cavities. The study has been performed using a 2-dimensional time-domain code TDBBU developed in-house. The stability has been confirmed for the present setup of beamline elements with different initial offsets and currents ranging 1 mA - 100 mA.