Author: Butler, J.B.
Paper Title Page
MOP119 The Dielectric Wakefield Accelerating Structure 319
 
  • A. Kanareykin, S.P. Antipov, J.B. Butler, C.-J. Jing, P. Schoessow
    Euclid TechLabs, LLC, Solon, Ohio, USA
  • W. Gai
    ANL, Argonne, USA
 
  Funding: US Department of Energy
We report here on the development of THz diamond wakefield structures produced using Chemical Vapor Deposition (CVD) technology*. The diamond structures would be used in a THz generation experiment at the new FACET facility at SLAC. We consider a dielectric based accelerating structure to study of the physical limitations encountered driving >GV/m wakefields in the cylindrical and planar geometries of a dielectric wakefield accelerator (DWA). In a DWA, an ultrashort drive bunch traverses the evacuated central region of the structure, creating Cherenkov wakefields in the dielectric to accelerate a witness bunch. A diamond-based DWA structure will allow a sustained accelerating gradient exceeding breakdown threshold demonstrated with the FFTB experiments**. The electrical and mechanical properties of diamond make it an ideal candidate material for use in dielectric rf structures: high breakdown voltage, extremely low dielectric losses and the highest thermoconductive coefficient available for removing waste heat from the device.
*R. J. Barker et al., Modern Microwave and Millimeter-Wave Power Electronics, IEEE Press/Wiley-Interscience, Piscataway NJ 2005, Chapter 7
**M.C. Thompson et al. Phys. Rev.Lett.100:214801, 2008.