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Han, J.H.

Paper Title Page
TUP031 Normal Conducting Options for the UK's New Light Source Project 462
  • C. Christou, R. Bartolini, J.H. Han, H.C. Huang, J. Kay
    Diamond, Oxfordshire

A New Light Source project has been initiated to deliver a conceptual design for a next-generation light source facility in the UK. One option for such a light source is a free electron laser based on normal-conducting linac technology. This paper considers the different options available for waveband, gun and rf design of a normal-conducting linac FEL, and presents an overview of accelerating structure, modulator and klystron capability and availability. Particular attention is paid to the issue of the operation of a normal-conducting device at repetition rates of several hundred pulses per second. Overall capabilities and limitations of this approach are illustrated by reference to a start-to-end model of a suitable 3 GeV S-band linac design.

TUP099 Design and Optimization of an S-Band Photoinjector 636
  • J.H. Han
    Diamond, Oxfordshire

Many X-ray Free Electron Laser (XFEL) projects are under construction or are being proposed. A photoinjector with low transverse emittance is one of the key elements for successful XFEL operation. For the last two decades, photoinjectors have been developed to reach the XFEL requirement, typically with a normalised emittance of 1 mm mrad for a 1 nC bunch and high peak current. Here, we make a further numerical optimization of an S-band photoinjector to achieve 0.5 mm mrad for 1 nC bunch in a structure that should permit high repetition rates to be achieved. Optimizations for alternative operation conditions with lower charge and lower emittance are also shown.