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MOPWI029 | Electron Bombardment of ZnTe EO Bunch Charge Detector for Signal Lifetime Studies in Radiation Environment | 1220 |
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Electro-optic detection of bunch charge distribution utilizing the nonlinear Pockel's and Kerr effect of materials has been implemented at various facilities as a method of passive detection for beam preservation throughout characterization. Most commonly, the inorganic II-VI material ZnTe is employed due to it's strong Pockel's EO effect and relatively high temporal resolution (~90 fs). Despite early exploration of radiation damage on ZnTe in exploration of semi-conductor materials in the 1970's, full characterization of EO response over radiation lifetime has yet to be performed. The following poster presents a method for ZnTe crystal characterization studies throughout radiation exposure at various energies and dosages by analyzing the changes in index of refraction including bulk uniformity, and THz signal response changes. | ||
DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-MOPWI029 | |
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TUPMA038 | Observation of Significant Quantum Efficiency Enhancement from a Polarized Photocathode with Distributed Brag Reflector | 1923 |
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Funding: This project was supported by the U.S. DOE Basic Energy Sciences under contract No. DE-AC05-060R23177. Polarized photocathodes with higher Quantum efficiency (QE) would help to reduce the technological challenge associated with producing polarized beams at milliampere levels, because less laser light would be required, which simplifies photocathode cooling requirements. And for a given amount of available laser power, higher QE would extend the photogun operating lifetime. The distributed Bragg reflector (DBR) concept was proposed to enhance the QE of strained-superlattice photocathodes by increasing the absorption of the incident photons using a Fabry-Perot cavity formed between the front surface of the photocathode and the substrate that includes a DBR, without compromising electron polarization. Here we present recent results showing QE enhancement of a GaAs/GaAsP strained-superlattice photocathode made with a DBR structure. Typically, a GaAs/GaAsP strained-superlattice photocathode without DBR provides a QE of 1%, at a laser wavelength corresponding to peak polarization. In comparison, the GaAs/GaAsP strained-superlattice photocathodes with DBR exhibited an enhancement of over 2 when the incident laser wavelength was tuned to meet the resonant condition for the Fabry-Perot resonator. |
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DOI • | reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPMA038 | |
Export • | reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml) | |