IPAC2015 - List of Authors (Uchida, K.)

Paper	Title	Page
TUPWA062	GaAs Photocathode Activation with CsTe Thin Film	1567
	M. Kuriki, Y. Seimiya, K. Uchida HU/AdSM, Higashi-Hiroshima, Japan S. Kashiwagi Tohoku University, Research Center for Electron Photon Science, Sendai, Japan
	Funding: This work is partly supported by MEXT/JSPS KAKENHI (Grant-in-Aid for scientific research) 24654054. GaAs is an unique and advanced photocathode which can generate highly polarized and extremely low emittance electron beam. The photo-emission is possible up to 900nm wavelength. These advantages are due to NEA (Negative Electron Affinity) surface where the conduction band minimum is higher than the vacuum energy state. The NEA surface is artificially made with Cs-O/F evaporation on the cleaned GaAs surface, but the NEA surface is fragile, so that the emission is easily lost by poor vacuum environment and high emission density. NEA activation with any vital material is desirable. We found that the GaAs can be activated by CsTe thin film which is known as a vital photo-cathode material. The photo-electron emission spectrum extends up to 900 nm wavelength which corresponds to the band-gap energy of GaAs. The result strongly suggests that the surface becomes effectively NEA state by the CsTe thin film.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPWA062
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Paper

Title

Page

GaAs Photocathode Activation with CsTe Thin Film

1567

M. Kuriki, Y. Seimiya, K. Uchida
HU/AdSM, Higashi-Hiroshima, Japan
S. Kashiwagi
Tohoku University, Research Center for Electron Photon Science, Sendai, Japan

Funding: This work is partly supported by MEXT/JSPS KAKENHI (Grant-in-Aid for scientific research) 24654054.
GaAs is an unique and advanced photocathode which can generate highly polarized and extremely low emittance electron beam. The photo-emission is possible up to 900nm wavelength. These advantages are due to NEA (Negative Electron Affinity) surface where the conduction band minimum is higher than the vacuum energy state. The NEA surface is artificially made with Cs-O/F evaporation on the cleaned GaAs surface, but the NEA surface is fragile, so that the emission is easily lost by poor vacuum environment and high emission density. NEA activation with any vital material is desirable. We found that the GaAs can be activated by CsTe thin film which is known as a vital photo-cathode material. The photo-electron emission spectrum extends up to 900 nm wavelength which corresponds to the band-gap energy of GaAs. The result strongly suggests that the surface becomes effectively NEA state by the CsTe thin film.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPWA062

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)