IPAC2015 - List of Authors (Takeda, Y.)

Paper	Title	Page
WEAD3	Quantum Efficiency Improvement of Polarized Electron Source using Strain Compensated Super Lattice Photocathode	2479
	N. Yamamoto, M. Hosaka, A. Mano, T. Miyauchi, Y. Takashima, Y. Takeda Nagoya University, Nagoya, Japan X.J. Jin, M. Yamamoto KEK, Ibaraki, Japan
	Polarized electron beam is essential for future electron-positron colliders and electron-ion colliders. Improving the quantum efficiency is an important subject to realize those proposed applications. Recently we have developed the strain compensated superlattice (SL) photocathode. In the strain compensated SLs, the equivalent compressive and tensile strains introduced in the well and barrier SL layers so that strain relaxation is effectively suppressed with increasing the SL layer thickness and high crystal quality can be expected. In this study, we fabricated the GaAs/GaAsP strain compensated SLs with the thickness up to 90-pair SL layers. Up to now, the electron spin polarization of 92 % and the quantum efficiency of 1.6 % were simultaneously achieved from 24-pair sample. In the presentation, we show the effect of the superlattice thickness on the photocathode performances and discuss the photocathode physics.
	Slides WEAD3 [3.064 MB]
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-WEAD3
Export •	reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)

Paper

Title

Page

Quantum Efficiency Improvement of Polarized Electron Source using Strain Compensated Super Lattice Photocathode

2479

N. Yamamoto, M. Hosaka, A. Mano, T. Miyauchi, Y. Takashima, Y. Takeda
Nagoya University, Nagoya, Japan
X.J. Jin, M. Yamamoto
KEK, Ibaraki, Japan

Polarized electron beam is essential for future electron-positron colliders and electron-ion colliders. Improving the quantum efficiency is an important subject to realize those proposed applications. Recently we have developed the strain compensated superlattice (SL) photocathode. In the strain compensated SLs, the equivalent compressive and tensile strains introduced in the well and barrier SL layers so that strain relaxation is effectively suppressed with increasing the SL layer thickness and high crystal quality can be expected. In this study, we fabricated the GaAs/GaAsP strain compensated SLs with the thickness up to 90-pair SL layers. Up to now, the electron spin polarization of 92 % and the quantum efficiency of 1.6 % were simultaneously achieved from 24-pair sample. In the presentation, we show the effect of the superlattice thickness on the photocathode performances and discuss the photocathode physics.

Slides WEAD3 [3.064 MB]

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-WEAD3

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)