Author: Swinson, C.
Paper Title Page
TUPWA020 BNL ATF II Beamlines Design 1445
 
  • M.G. Fedurin, Y.C. Jing, D. Stratakis, C. Swinson
    BNL, Upton, Long Island, New York, USA
 
  Funding: Work supported by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH10886 with the U.S. Department of Energy.
The Brookhaven National Lab. Accelerator Test Facility (BNL ATF) is currently undergoing a major upgrade (ATF-II). Together with a new location and much improved facilities, the ATF will see an upgrade in its major capabilities: electron beam energy and quality and CO2 laser power. The electron beam energy will be increased in stages, first to 100-150 MeV followed by a further increase to 500 MeV. Combined with the planned increase in CO2 laser power (from 1-100 TW), the ATF-II will be a powerful tool for Advanced Accelerator research. A high-brightness electron beam, produced by a photocathode gun, will be accelerated and optionally delivered to multiple beamlines. Besides the energy range (up to a possible 500 MeV in the final stage) the electron beam can be tailored to each experiment with options such as: small transverse beam size (<10 um), flat beam, short bunch length (<100 fs) and, combined short and small bunch options. This report gives a detailed overview of the ATF-II capabilities and beamlines configuration.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPWA020  
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TUPMA043 Experimental Test of Semiconductor Dechirper 1932
 
  • S.P. Antipov, S.V. Baryshev, C.-J. Jing, A. Kanareykin
    Euclid TechLabs, LLC, Solon, Ohio, USA
  • S. Baturin
    LETI, Saint-Petersburg, Russia
  • M.G. Fedurin, K. Kusche, C. Swinson
    BNL, Upton, Long Island, New York, USA
  • W. Gai, S. Stoupin, A. Zholents
    ANL, Argonne, Illinois, USA
 
  Funding: Work supported by the Department of Energy SBIR program under Contract #DE-SC0006299
We report the observation of de-chirping of a linearly chirped (in energy) electron bunch by its passage through a 4 inch long rectangular waveguide loaded with two silicon bars 0.25 inch thick and 0.5 inch wide. Silicon being a semiconductor has a conductivity that allows it to drain the charge fast in case if some electrons get intercepted by the dechirper. At the same time the conductivity is low enough for the skin depth to be large (on the order of 1 cm) making the silicon loaded waveguide a slow wave structure supporting wakefields that dechirp the beam.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPMA043  
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