Author: Stoupin, S.
Paper Title Page
TUPMA028 Feasibility Study for an X-ray FEL Oscillator at the LCLS-II 1897
 
  • T.J. Maxwell, J. Arthur, Y. Ding, W.M. Fawley, J.C. Frisch, J.B. Hastings, Z. Huang, J. Krzywinski, G. Marcus
    SLAC, Menlo Park, California, USA
  • W.M. Fawley
    Elettra-Sincrotrone Trieste S.C.p.A., Basovizza, Italy
  • K.-J. Kim, R.R. Lindberg, D. Shu, Yu. Shvyd'ko, S. Stoupin
    ANL, Argonne, Ilinois, USA
 
  Funding: This work supported in part under US Department of Energy contract DE-AC02-76SF00515.
We show that a free-electron laser oscillator generating X-ray pulses with hard X-ray wavelengths of order 0.1 nm is feasible using the presently proposed FEL-quality electron beam within the space of existing LCLS-II infrastructure when combined with a low-loss X-ray crystal cavity. In an oscillator configuration driven by the 4 GeV energy electron beam lasing at the fifth harmonic, output x-ray bandwidths as small as a few meV are possible. The delivered average spectral flux is at least two orders of magnitude greater than present synchrotron-based sources with highly stable, coherent pulses of duration 1 ps or less for applications in Mössbauer spectroscopy and inelastic x-ray scattering.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPMA028  
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TUPMA043 Experimental Test of Semiconductor Dechirper 1932
 
  • S.P. Antipov, S.V. Baryshev, C.-J. Jing, A. Kanareykin
    Euclid TechLabs, LLC, Solon, Ohio, USA
  • S. Baturin
    LETI, Saint-Petersburg, Russia
  • M.G. Fedurin, K. Kusche, C. Swinson
    BNL, Upton, Long Island, New York, USA
  • W. Gai, S. Stoupin, A. Zholents
    ANL, Argonne, Illinois, USA
 
  Funding: Work supported by the Department of Energy SBIR program under Contract #DE-SC0006299
We report the observation of de-chirping of a linearly chirped (in energy) electron bunch by its passage through a 4 inch long rectangular waveguide loaded with two silicon bars 0.25 inch thick and 0.5 inch wide. Silicon being a semiconductor has a conductivity that allows it to drain the charge fast in case if some electrons get intercepted by the dechirper. At the same time the conductivity is low enough for the skin depth to be large (on the order of 1 cm) making the silicon loaded waveguide a slow wave structure supporting wakefields that dechirp the beam.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPMA043  
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