Author: Mano, A.
Paper Title Page
TUPJE005 Development of Pulsed Multipole Magnet for Aichi SR Storage Ring 1616
 
  • K. Ito, M. Hosaka, A. Mano, T. Takano, Y. Takashima
    Nagoya University, Nagoya, Japan
  • K. Hayashi, M. Katoh
    UVSOR, Okazaki, Japan
  • N. Yamamoto
    KEK, Ibaraki, Japan
 
  The Aichi synchrotron radiation (Aichi SR) center is an industrial oriented synchrotron light source facility. The electron energy and circumference of the storage ring are 1.2 GeV and 72 m. The natural emittance is 53 nm-rad. Since the pulsed multipole injection scheme provides great advantages for relatively smaller SR rings*, we are developing a pulsed multipole injection system for Aichi SR storage ring. In this system, it is essential to minimize the perturbation to the stored beam. To realize the required performances, we have to minimize the residual field at stored beam position, taken into account the field generated by the copper current lead of the input terminal. In addition, we carried out the analytical calculation to estimate the magnet field due to the current lead and optimized the geometrical structure of them. Construction of the multipole magnet will be completed in March 2015 and the field measurement will be carried out in April. In this presentation, we report the detail of the magnet design and the measurement results of pulsed magnetic field for the manufactured magnet.
* N. Yamamoto, et. al., NIM A 767, 26-33 (2014)
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPJE005  
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WEAD3 Quantum Efficiency Improvement of Polarized Electron Source using Strain Compensated Super Lattice Photocathode 2479
 
  • N. Yamamoto, M. Hosaka, A. Mano, T. Miyauchi, Y. Takashima, Y. Takeda
    Nagoya University, Nagoya, Japan
  • X.J. Jin, M. Yamamoto
    KEK, Ibaraki, Japan
 
  Polarized electron beam is essential for future electron-positron colliders and electron-ion colliders. Improving the quantum efficiency is an important subject to realize those proposed applications. Recently we have developed the strain compensated superlattice (SL) photocathode. In the strain compensated SLs, the equivalent compressive and tensile strains introduced in the well and barrier SL layers so that strain relaxation is effectively suppressed with increasing the SL layer thickness and high crystal quality can be expected. In this study, we fabricated the GaAs/GaAsP strain compensated SLs with the thickness up to 90-pair SL layers. Up to now, the electron spin polarization of 92 % and the quantum efficiency of 1.6 % were simultaneously achieved from 24-pair sample. In the presentation, we show the effect of the superlattice thickness on the photocathode performances and discuss the photocathode physics.  
slides icon Slides WEAD3 [3.064 MB]  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-WEAD3  
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