Author: Baturin, S.
Paper Title Page
TUPMA043 Experimental Test of Semiconductor Dechirper 1932
 
  • S.P. Antipov, S.V. Baryshev, C.-J. Jing, A. Kanareykin
    Euclid TechLabs, LLC, Solon, Ohio, USA
  • S. Baturin
    LETI, Saint-Petersburg, Russia
  • M.G. Fedurin, K. Kusche, C. Swinson
    BNL, Upton, Long Island, New York, USA
  • W. Gai, S. Stoupin, A. Zholents
    ANL, Argonne, Illinois, USA
 
  Funding: Work supported by the Department of Energy SBIR program under Contract #DE-SC0006299
We report the observation of de-chirping of a linearly chirped (in energy) electron bunch by its passage through a 4 inch long rectangular waveguide loaded with two silicon bars 0.25 inch thick and 0.5 inch wide. Silicon being a semiconductor has a conductivity that allows it to drain the charge fast in case if some electrons get intercepted by the dechirper. At the same time the conductivity is low enough for the skin depth to be large (on the order of 1 cm) making the silicon loaded waveguide a slow wave structure supporting wakefields that dechirp the beam.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2015-TUPMA043  
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