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RIS citation export for MOYGB1: Industrial Applications of Free Electron Lasers: Extreme Ultraviolet Lithography

TY - UNPB
AU - Naulleau, P.
ED - Henderson, Stuart
ED - Akers, Evelyn
ED - Satogata, Todd
ED - Schaa, Volker R.W.
TI - Industrial Applications of Free Electron Lasers: Extreme Ultraviolet Lithography
J2 - Proc. of IPAC2015, Richmond, VA, USA, May 3-8, 2015
C1 - Richmond, VA, USA
T2 - International Particle Accelerator Conference
T3 - 6
LA - english
AB - EUV lithography (EUVL) is recognized as a critical path technology for the next generation of high volume semiconductor manufacturing. Long term, EUVL source power requirements approach and even exceed 1kW of average power. Accelerator driven free electron laser (FEL) technology has emerged a promising technology to meet this need. This talk should be an overview of EUVL, and summarize the basic requirements for EUVL sources including factors driving potential future power scaling needs.
PB - JACoW
CP - Geneva, Switzerland
ER -