IPAC2014 - List of Authors (Tamura, F.)

Paper	Title	Page
MOPME068	SiC-JFET Switching Power Supply toward for Induction Ring Accelerators	523
	K. Okamura, K. Takayama, M. Wake, T. Yoshimoto KEK, Ibaraki, Japan R. Sasaki, K. Takaki Iwate university, Morioka, Iwate, Japan K. Takayama, T. Yoshimoto TIT, Yokohama, Japan F. Tamura Nagaoka University of Technology, Nagaoka, Niigata, Japan
	Funding: Japan Science and Technology Agency Grant-In Aid for Scientific Research(s) (KAKENHI No. 24310077) A new induction synchrotron system using an induction cell has been developed and constructed at KEK. In that system, the switching power supply is one of the key devices that realize digital acceleration. The requirements of the switching power supply are high voltage (2 kV) and high repetition frequency (1 MHz). In the present system, we used series connected MOSFETs as the switching device. However, series connection gives large complexity and less reliability. Among various switching devices, a SiC-JFET should be a promising candidate because it has ultrafast switching speed and high voltage blocking capability. We have developed a new and original SiC-JFET switching device and a compact switching power supply employing this switching element. Now it is integrated into the induction acceleration system for the KEK-DA. Furthermore we have started development of the next generation of SiC package, which has higher voltage capability (2.4 kV) and 2 in 1 module construction. At the conference, the first experimental demonstration of heavy ion acceleration utilizing the SiC-JFET and the design status of the new device package will be presented. T. Iwashita et al., Phys. Rev. ST-AB 14, 071302 (2011). ** K. Okamura et al., “A Compact Switching Power Supply Utilizing SiC-JFET for The Digital Accelerator ”, in Proc. of IPAC’12, pp 3677-3679.
DOI •	reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2014-MOPME068
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Paper

Title

Page

SiC-JFET Switching Power Supply toward for Induction Ring Accelerators

523

K. Okamura, K. Takayama, M. Wake, T. Yoshimoto
KEK, Ibaraki, Japan
R. Sasaki, K. Takaki
Iwate university, Morioka, Iwate, Japan
K. Takayama, T. Yoshimoto
TIT, Yokohama, Japan
F. Tamura
Nagaoka University of Technology, Nagaoka, Niigata, Japan

Funding: Japan Science and Technology Agency Grant-In Aid for Scientific Research(s) (KAKENHI No. 24310077)
A new induction synchrotron system using an induction cell has been developed and constructed at KEK*. In that system, the switching power supply is one of the key devices that realize digital acceleration. The requirements of the switching power supply are high voltage (2 kV) and high repetition frequency (1 MHz). In the present system, we used series connected MOSFETs as the switching device. However, series connection gives large complexity and less reliability. Among various switching devices, a SiC-JFET should be a promising candidate because it has ultrafast switching speed and high voltage blocking capability. We have developed a new and original SiC-JFET switching device and a compact switching power supply employing this switching element**. Now it is integrated into the induction acceleration system for the KEK-DA. Furthermore we have started development of the next generation of SiC package, which has higher voltage capability (2.4 kV) and 2 in 1 module construction. At the conference, the first experimental demonstration of heavy ion acceleration utilizing the SiC-JFET and the design status of the new device package will be presented.
* T. Iwashita et al., Phys. Rev. ST-AB 14, 071302 (2011).
** K. Okamura et al., “A Compact Switching Power Supply Utilizing SiC-JFET for The Digital Accelerator ”, in Proc. of IPAC’12, pp 3677-3679.

DOI •

reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2014-MOPME068

Export •

reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)