Author: Nozdrin, M.A.
Paper Title Page
THPRO022 JINR Powerful Laser Driver Applied for FEL Photoinjector 2906
 
  • E. Syresin, N. Balalykin, M.A. Nozdrin, G. Shirkov, G.V. Trubnikov
    JINR, Dubna, Moscow Region, Russia
  • E. Gacheva, E. Khazanov, G. Luchinin, S. Mironov, A. Poteomkin, V. Zelenogorsky
    IAP/RAS, Nizhny Novgorod, Russia
  
  Funding: The work is funded by the German Federal Ministry of education and Research, project 05K10CHE.
The JINR develops a project of superconducting linear accelerator complex, based on a superconducting linear accelerator, for applications in nanoindustry, mainly for extreme ultraviolet lithography at a wavelength of 13.5 nm using kW-scale Free Electron Laser (FEL) light source. The application of kW-scale FEL source permits realizing EUV lithography with 22 nm, 16 nm resolutions and beyond. JINR-IAP collaboration constructed powerful laser driver applied for photoinjector of FEL linear accelerator which can be used for EUV lithography. To provide FEL kW-scale EUV radiation the photoinjector laser driver should provide a high macropulse repetition rate of 10 Hz, a long macropulse time duration of 0.8 ms and 8000 pulses per macropulse. The laser driver operates at wavelength of 260-266 nm on forth harmonic in the mode locking on base of Nd ions or Yb ions The laser driver micropulse energy of 1.6 uJ should provide formation of electron beam in FEL photoinjector with the bunch charge about 1 nC. 		 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2014-THPRO022  
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THPRO044 Report on Gun Conditioning Activities at PITZ in 2013 2962
 
  • M. Otevřel, P. Boonpornprasert, J.D. Good, M. Groß, I.I. Isaev, D.K. Kalantaryan, M. Khojoyan, G. Kourkafas, M. Krasilnikov, D. Malyutin, D. Melkumyan, T. Rublack, F. Stephan, G. Vashchenko
    DESY Zeuthen, Zeuthen, Germany
  • G. Asova
    INRNE, Sofia, Bulgaria
  • P. Boonpornprasert, S. Rimjaem
    Chiang Mai University, Chiang Mai, Thailand
  • F. Brinker, K. Flöttmann, S. Lederer, B. Marchetti, S. Schreiber
    DESY, Hamburg, Germany
  • Ye. Ivanisenko
    PSI, Villigen PSI, Switzerland
  • M.A. Nozdrin
    JINR, Dubna, Moscow Region, Russia
  • G. Pathak
    Uni HH, Hamburg, Germany
  • D. Richter
    BESSY GmbH, Berlin, Germany
  
  Recently three RF guns were prepared at the Photo Injector Test Facility at DESY, location Zeuthen (PITZ) for their subsequent operation at FLASH and the European XFEL. The gun 3.1 is a previous cavity design and is currently installed and operated at FLASH, the other two guns 4.3 and 4.4 were of the current cavity design and are dedicated to serve for the start-up of the European XFEL photo-injector. All three cavities had been dry-ice-cleaned prior their conditioning and hence showed low dark current levels. The lowest dark current level – as low as 60μA at 65MV/m field amplitude – has been observed for the gun 3.1. This paper reports in details about the conditioning process of the most recent gun 4.4. It informs about experience gained at PITZ during establishing of the RF conditioning procedure and provides a comparison with the other gun cavities in terms of the dark currents. It also summarizes the major setup upgrades, which have affected the conditioning processes of the cavities.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2014-THPRO044  
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