Author: Delonca, M.
Paper Title Page
THPRI096 Use of Silicon Carbide as Beam Intercepting Device Material: Tests, Issues and Numerical Simulations 3998
 
  • C. Maglioni, M. Delonca, M. Gil Costa, A. Vacca
    CERN, Geneva, Switzerland
 
  Silicon Carbide (SiC) stands as one of the most promising ceramic material with respect to its thermal shock resistance and mechanical strengths. It has hence been considered as candidate material for the development of higher performance beam intercepting devices at CERN. Its brazing with a metal counterpart has been tested and characterized by means of microstructural and ultrasound techniques. Despite the very positive results, its use has to be evaluated with care, due to the strong evidence in literature of large and permanent volumetric expansion, called swelling, under the effect of neutron and ion irradiation. This may cause premature and sudden failure of components, and can be mitigated to some extent by operating at high temperature. For this reason limited information is available for irradiation below 100°C, which is the typical temperature reached in intercepting devices like dumps or collimators. This paper describes the brazing campaign carried out at CERN, the results, and the theoretical and numerical approach used to characterize the extent of the swelling phenomenon with radiation, as well as the p+ irradiation test program to be conducted in the next future.  
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2014-THPRI096  
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