IPAC2013 - List of Authors (Qi, C.)

Paper	Title	Page
THPWA028	Analysis of Uncertainty of Dose Rate Measurement on the Accelerator “QiangGuang-I”	3684
	R.B. Li, X.Y. Bai, X.M. Jin, Q. Ma, C. Qi, G.Z. Wang NINT, Xi'an, People's Republic of China
	“QiangGuang-I”, working on short pulse state, can be used to research the transient radiation effects on electronic devices. The measurement of dose rate is significant for assessing devices’ radiation-resistant ability. This paper comprehensively analyzes the originations of uncertainty on dose rate’s measurement, such as thermoluminescent dosemeter’s linearity degree and response to X-rays energy spectrum, testing instruments’ resolution, waveforms’ transmission distortion , and positional error; figures out the extended uncertainty. The result shows that the expanded uncertainty of dose rate’s measurement is less than 20%, which is satisfactory for researching on devices’ transient radiation effects, and proves that the method used to measure dose rate is reasonable.

THPWA029	Transient Ionizing Radiation Effect of Bipolar Operational Amplifiers to Pulsed X-rays	3687
	X.M. Jin Xiaoming Jin, People's Republic of China X.Y. Bai, R.B. Li, D.S. Lin, Q. Ma, C. Qi, G.Z. Wang, S.C. Yang NINT, Xi'an, People's Republic of China
	Abstract – The pulsed ionizing radiation effect of monolithic operational amplifiers is investigated using a flash X-ray facility. The experimental results show that the pulsed ionizing radiation produces voltage surges in the devices and the output voltage recovers linearly after transient disturbance which includes a negative peak and a positive peak. The recovery time depends on the amplitude of the positive peak and the inherent slew rate of the devices. The degradation of transient disturbance amplitude and the recovery time versus ionizing dose rate of pulsed X-rays is researched. The relationship of circuit effects to physical mechanisms is investigated in detail. The photocurrent induced by transient ionizing radiation in the PN junctions in integrated circuits is responsible for the electrical degradation. Keywords – Transient ionizing Radiation effect, Transient disturbance, Photocurrent, integrated circuits

Paper

Title

Page

Analysis of Uncertainty of Dose Rate Measurement on the Accelerator “QiangGuang-I”

3684

R.B. Li, X.Y. Bai, X.M. Jin, Q. Ma, C. Qi, G.Z. Wang
NINT, Xi'an, People's Republic of China

“QiangGuang-I”, working on short pulse state, can be used to research the transient radiation effects on electronic devices. The measurement of dose rate is significant for assessing devices’ radiation-resistant ability. This paper comprehensively analyzes the originations of uncertainty on dose rate’s measurement, such as thermoluminescent dosemeter’s linearity degree and response to X-rays energy spectrum, testing instruments’ resolution, waveforms’ transmission distortion , and positional error; figures out the extended uncertainty. The result shows that the expanded uncertainty of dose rate’s measurement is less than 20%, which is satisfactory for researching on devices’ transient radiation effects, and proves that the method used to measure dose rate is reasonable.

THPWA029

Transient Ionizing Radiation Effect of Bipolar Operational Amplifiers to Pulsed X-rays

3687

X.M. Jin
Xiaoming Jin, People's Republic of China
X.Y. Bai, R.B. Li, D.S. Lin, Q. Ma, C. Qi, G.Z. Wang, S.C. Yang
NINT, Xi'an, People's Republic of China

Abstract – The pulsed ionizing radiation effect of monolithic operational amplifiers is investigated using a flash X-ray facility. The experimental results show that the pulsed ionizing radiation produces voltage surges in the devices and the output voltage recovers linearly after transient disturbance which includes a negative peak and a positive peak. The recovery time depends on the amplitude of the positive peak and the inherent slew rate of the devices. The degradation of transient disturbance amplitude and the recovery time versus ionizing dose rate of pulsed X-rays is researched. The relationship of circuit effects to physical mechanisms is investigated in detail. The photocurrent induced by transient ionizing radiation in the PN junctions in integrated circuits is responsible for the electrical degradation. Keywords – Transient ionizing Radiation effect, Transient disturbance, Photocurrent, integrated circuits