IPAC2013 - List of Authors (Ohshima, T.)

Paper	Title	Page
MOPWA003	New Development of Compact Fast Pulsed Power Supply System in the SPring-8	666
	C. Mitsuda, K. Fukami, K. Kobayashi, T. Nakanishi, H. Ohkuma, S. Sasaki JASRI/SPring-8, Hyogo-ken, Japan T. Ohshima RIKEN SPring-8 Center, Sayo-cho, Sayo-gun, Hyogo, Japan
	We have developed a compact fast pulsed power supply system as a part of the development of the fast kicker magnet system in the SPring-8 storage ring. The kicker magnet is needed for the 1 ps short pulsed X-ray generation by a vertical kick and the suppression of the fast beam oscillation by counter kick. The required pulse width and current for above applications have to be a enough short time less than 4.8 us of the revolution time and more than 200 A respectively. We selected a Si-MOSFET as a switching device because a MOSFET has two capabilities of the fast switching and high-voltage resistance, and has a smaller size than an IGBT. The current are increased by parallel or parallel-series connecting of MOSFETs. We started the development of a test system whose output current was a 67 A with a pulse width of 1.0 us in 2008. From 2009 to 2011, we succeeded in achieving the output current of a 270 A with a pulse width of 0.8 us by using prototype system. In 2012, by increasing the number of MOSFET, we confirmed the output current of 250 A with a pulse width of 0.5 us, whose case size is a just 210(W) x 160(H) x 300(D) mm. We will report the development status in detail.

Paper

Title

Page

New Development of Compact Fast Pulsed Power Supply System in the SPring-8

666

C. Mitsuda, K. Fukami, K. Kobayashi, T. Nakanishi, H. Ohkuma, S. Sasaki
JASRI/SPring-8, Hyogo-ken, Japan
T. Ohshima
RIKEN SPring-8 Center, Sayo-cho, Sayo-gun, Hyogo, Japan

We have developed a compact fast pulsed power supply system as a part of the development of the fast kicker magnet system in the SPring-8 storage ring. The kicker magnet is needed for the 1 ps short pulsed X-ray generation by a vertical kick and the suppression of the fast beam oscillation by counter kick. The required pulse width and current for above applications have to be a enough short time less than 4.8 us of the revolution time and more than 200 A respectively. We selected a Si-MOSFET as a switching device because a MOSFET has two capabilities of the fast switching and high-voltage resistance, and has a smaller size than an IGBT. The current are increased by parallel or parallel-series connecting of MOSFETs. We started the development of a test system whose output current was a 67 A with a pulse width of 1.0 us in 2008. From 2009 to 2011, we succeeded in achieving the output current of a 270 A with a pulse width of 0.8 us by using prototype system. In 2012, by increasing the number of MOSFET, we confirmed the output current of 250 A with a pulse width of 0.5 us, whose case size is a just 210(W) x 160(H) x 300(D) mm. We will report the development status in detail.