Author: Zennaro, R.
Paper Title Page
MOOBC03 A Multi Purpose X Band Accelerating Structure 70
 
  • M.M. Dehler, A. Citterio, R. Zennaro
    Paul Scherrer Institut, Villigen, Switzerland
  • G. D'Auria, C. Serpico
    ELETTRA, Basovizza, Italy
  • D. Gudkov, A. Samoshkin
    JINR, Dubna, Moscow Region, Russia
  • S. Lebet, G. Riddone, J. Shi
    CERN, Geneva, Switzerland
 
  In a collaboration between CERN, PSI and Sincrotrone Trieste (ST), a series of four multipurpose X-band accelerating structures has been designed and fabricated. The structures have 72 cells with a phase advance of 5 pi/6 and include upstream and downstream wakefield monitors to measure the beam alignment. We give an overview of the electrical and mechanical design and describe the fabrication of the first units. We also present the results of the low level RF tests. Using measurements of the internal cell to cell misalignment, the residual transverse wake and the noise floor of the wake field monitors are computed. Furthermore, we present the first experiences running the structures under high power.  
slides icon Slides MOOBC03 [15.521 MB]  
 
THPPC024 Design, Construction and Power Conditioning of the First C-band Test Accelerating Structure for SwissFEL 3329
 
  • R. Zennaro, J. Alex, H. Blumer, M. Bopp, A. Citterio, T. Kleeb, L. Paly, J.-Y. Raguin
    Paul Scherrer Institut, Villigen, Switzerland
 
  The SwissFEL C-band linac will consist of 26 RF modules with a total acceleration voltage of 5.4 GV. Each module will be composed of a single 50 MW klystron and its solid-state modulator feeding a pulse compressor and four two-meter long accelerating structures. PSI has launched a vigorous R&D program of development of the accelerating structures including structure design, production and high-power RF tests. The baseline design is based on ultra-precise cup machining to avoid dimple tuning. The first test structure is a constant impedance structure composed of eleven double-rounded cups. We report here on the structure design, production, low-level RF measurements, high-power conditioning and breakdown analysis.