Author: Wake, M.
Paper Title Page
THPPD071 A Compact Switching Power Supply utilizing SiC-JFET for the Digital Accelerator 3677
  • K. Okamura, T. Iwashita, K. Takayama, M. Wake
    KEK, Ibaraki, Japan
  • K. Takaki, M. Toshiya
    Iwate university, Morioka, Iwate, Japan
  New induction synchrotron system using an induction cell has been developed and constructed at KEK*. We refer to the accelerator using the induction acceleration system combined with digitally controlled PWM power supply as Digital Accelerator**. In that system, the switching power supply is one of the key devices which realize digital acceleration. The requirements of the switching power supply are high voltage (2 kV) and high repetition frequency (1 MHz). In the present system, we used series connected MOSFETs as the switching device. However, series connection gives large complexity and less reliability. Among the various switching devices, a SiC-JFET is the promising candidates because it has ultrafast switching speed and voltage blocking capability. Therefore, we have developed a new device to substitute existing silicon MOSFET and succeeded to operate with 1 MHz – 1 kV – 27 A condition***. Then we designed and constructed a ultra compact full bridge switching power supply utilizing those devices as a next step. Design and test results will be presented in the conference.
* T. Iwashita et al., KEK Digital Accelerator, Phys. Rev. ST-AB 14, 071302 (2011)
** K. Takayama et al., in Proc. of IPAC’11, pp 1920-1922
*** K. Okamura et al., in Proc. of IPAC’11, pp 3400-3402