Author: Oh, Y.
Paper Title Page
THP041 Development of All-metal Stacked-double Gate Field Emitter Array Cathodes for X-ray Free-electron Laser Applications 811
  • S. Tsujino, H.-H. Braun, P. Das Kanungo, V. Guzenko, C. Lee, Y. Oh, M. Paraliev
    PSI, Villigen PSI, Switzerland
  • T. Feurer
    Universität Bern, Institute of Applied Physics, Bern, Switzerland
  Funding: This work was partially supported by the Swiss National Science Foundation Nos. 200020143428 and 2000021147101.
We report the design, fabrication, and characterization of all-metal stacked-double-gate field emitter array (FEA) cathodes as a potential upgrade option of SwissFEL cathode at the Paul Scherrer Institute. Single-gate FEAs have demonstrated stable operation and gated field emission in pulsed diode gun with gradient up to 30 MV/m with pulse duration down to 200 ps and generation of 5 pC electron bunches by near infrared laser-induced field emission. However for high brightness applications it is crucial to reduce the beam divergence of individual beamlet by a suitable double-gate structure. The challenge lies in suppressing the concomitant decrease of the emission current when a negative focusing potential is applied to the second gate. To solve this problem, a stacked-double-gate FEAs with large collimation gate aperture diameter has been proposed. The intrinsic transverse emittance evaluated from a beam measurement for 1 mm-diameter FEA was below 0.1 mm-mrad. Compatibility with neon-gas conditioning to improve the beam uniformity and high emission current with double-gate FEAs were also demonstrated recently. The current research is focusing on the combination of the surface-plasmon-polariton resonance of the gate electrode and the near infrared laser-induced field emission to realize an ultrafast and ultrabright FEA cathode.