Author: Lee, B.C.
Paper Title Page
Compact FEL Facilities for the Next Generation EUV Lithography  
  • Y. Kim, H.K. Cha, Y.U. Jeong, B.C. Lee
    KAERI, Daejon, Republic of Korea
  • Y.W. Parc
    PAL, Pohang, Kyungbuk, Republic of Korea
  Recently, for highly cost-effective productivity, chip manufacturers such as Samsung, Hynix, and Intel have been developing a next generation extreme ultraviolet (EUV) lithography technology. Due to the current low average power limitation, however, a new light source with a shorter wavelength of around 13.5 nm and a sufficient average photon beam power higher than 1 kW is strongly requested for the EUV lithography. In 2014, we had several meetings on the EUV lithography with Korean major chip manufactures. In this paper, we report manufactures' requirements and concerns on FEL based light source for the EUV lithography. In addition, we also describe possible compact FEL facilities for the next generation EUV lithography.