Author: Titberidze, M.
Paper Title Page
MOPD48 Overall Performance Comparison of S-band, C-band, and X-band Based Compact XFEL Facilities 149
 
  • Y. Kim
    IAC, Pocatello, IDAHO, USA
  • K.H. Jang
    KAERI, Daejon, Republic of Korea
  • S. Setiniyaz, M. Titberidze
    ISU, Pocatello, Idaho, USA
 
  After successful demonstration of XFEL lasing from C-band based XFEL facility at SPring-8, demand on compact XFEL facilities becomes much stronger. Recently, there were several activities to build much more compact XFEL facilities, which are based on X-band RF linac technology. But up to now, there was no detailed research to compare the performance of S-band, C-band, and X-band RF linac based XFEL facilities. To compare the performance, recently, ISU accelerator and FEL physics group has designed three different XFEL facilities where the S-band, C-band, and X-band RF linac technologies are used for the main FEL driving linacs. In this paper, we describe layouts, start-to-end simulations, and comparison of overall performance of those three XFEL facilities. Finally, we also describe control of energy chirp, RF jitter tolerances, alignment and transverse wakefield issue, and bandwidth of XFEL photon beam in C-band or X-band based XFEL facilities.