Author: Zhang, T.
Paper Title Page
TUPB21 Conceptual Design of a High Brightness and Fully Coherent Free Electron Laser in VUV Regime 302
 
  • D. Wang, T. Zhang, Z.T. Zhao
    SINAP, Shanghai, People's Republic of China
  • X.M. Yang
    DICP, Dalian, People's Republic of China
 
  In this paper we propose a new generation light source based on the High Gain Harmonic Generation (HGHG) Free Electron Laser (FEL) for scientific researches. This facility is designed to cover wavelength range from 50 nm to 150 nm with high brightness and full coherence by using the continuously tuning Optical Parametric Amplifier (OPA) seed laser system and variable gap undulators.