Author: Tong, D.C.
Paper Title Page
THPB28 The High Power Test Model of C-band Accelerating Structure for Compact XFEL at SINAP 617
 
  • W. Fang, Q. Gu, Z.T. Zhao
    SINAP, Shanghai, People's Republic of China
  • D.C. Tong
    TUB, Beijing, People's Republic of China
 
  R&D of a C-band (5712 MHz) high gradient traveling-wave accelerating structure is being in progress at Shanghai Institute of Applied Physics (SINAP). Conceptual design of the accelerating structure has been accomplished, and verified by the cold test of the experimental model. Now the first prototype structure is ready for high RF power test and the optimization of a new operating mode is proposed for developing a robust high gradient C-band struture. In this paper, the results of the cold test of the first prototype structure and the optimization details are introduced.